Photo of Osama Awadelkarim

Osama Awadelkarim

UNESCO Chair Professor and Director of the Center for Nanotechnology Education and Utilization

Affiliation(s):

  • Engineering Science and Mechanics
  • Center for Nanotechnology Education and Utilization

309E Earth and Engineering Sciences Building

ooa1@psu.edu

814-863-1773

Research Areas:

Advanced Materials and Devices; Emerging Manufacturing Processes for Materials, Tissues, and Devices; Nanoscience, Bionanoscience and Engineering

Interest Areas:

Nano-fabrication; microelectronics materials/devices; power electronic devices; IC Processing; Defects in crystalline/polycrystalline semiconductor materials; Thin film transistors - active matrix liquid crystal display application; MEMS/nanofabrication.

 
 

 

Education

  • Ph D, J. J. Thomson Physical Laboratory, Reading University, United Kingdom

Publications

Books

  • Julian W. Gardner, Vivjay K. Varadan and Osama O Awadelkarim, 2001, Microsensors, MEMS, and Smart Devices, John Wiley & Sons, Ltd.

Journal Articles

  • Xinyu Wang, Osama O Awadelka andim, , 2026, "The effects of gamma irradiation of Si-C- and Si-MOSFETs on their response to electrical stress and thermal annealing", Microelectronic Reliability, 177, pp. 9
  • Xinyu Wang and Osama O Awadelkarim, 2024, "Comparison of Si and SiC MOSFETs responses to electrical stress and the observation of parameter recovery in SiC MOSFETs by stress superposition", Engineering Research Express, 6
  • Chengzhi Li, Haodong Wu, Bed Poudel, Osama O Awadelkarim and Akhlesh Lakhtakia, 2024, "Luminescent solar concentrator containing Parylene-C microfibrous thin film infiltrated with Lumogen F Red 305", J. Opt., 26, pp. 14
  • Amartya Ghosh, Jifa Hao, Michael Cook, Samia A Suliman, Osama O Awadelka andim, , 2022, "Threshold-Voltage Bias-Instability in SiC MOSFETs: Effects of Stress Temperature and Level on Oxide Charge Buildup and Recovery", Semiconductor Science and Technology, 37, (7)
  • Atilla Cakmak, E Colak, Osama O Awadelka andim, , 2021, "An effective lithography training module adapting semianalytical calculation approaches", Journal of the Society of Information Display, 29, (11), pp. pp. 868-895
  • Ibrahim H Khawaji, Osama O Awadelkarim and Akhlesh Lakhtakia, 2020, "Charge Buildup and Leakage Current in Gold/Paralene-C/Pentacene Capacitor under Constant-Voltage Stress", Flexible and Printed Electronics, 5, (3), pp. 035003
  • Ibrahim H. Khawaji, Osama O Awadelkarim and Akhlesh Lakhtakia, 2019, "Effects of Constant-Voltage Stress on the Stability of Parylene-C Columnar Microfibrous Thin Films", IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 26, (1), pp. 270-275
  • Osama O Awadelkarim, 2019, "Long Wavelength Infrared Characteristics of Multifunctional Microfibrous Thin Films of Parylene C", Microwave and Optical Technology Letters, 61, (9), pp. pp. 2206-2209
  • Ibrahim H. Khawaji, Chandraprakash Chindam, Osama O Awadelkarim and Akhlesh Lakhtakia, 2017, "Dielectric Properties of and Charge Transport in Columnar Microfibrous Thin Films of Parylene C", IEEE TRANSACTIONS ON ELECTRON DEVICES, 64, (8), pp. 3360-3367
  • Chandraprakash Chindam, Akhlesh Lakhtakia and Osama O Awadelkarim, 2017, "Parylene-C microfibrous thin films as phononic crystals", JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 27, (7)
  • Ibrahim H. Khawaji, Chandraprakash Chindam, Osama O Awadelkarim and Akhlesh Lakhtakia, 2017, "Selectablity of mechanical and dielectric properties of Parylene-C columnar microfibrous thin films by varying deposition angle", FLEXIBLE AND PRINTED ELECTRONICS, 2, (4)
  • Chandraprakash Chindam, Akhlesh Lakhtakia and Osama O Awadelkarim, 2016, "Reply to "Comment on 'Surface energy of Parylene C'"", MATERIALS LETTERS, 166, pp. 325-326
  • Chandraprakash Chindam, Nicole Brown, Akhlesh Lakhtakia, Osama O Awadelkarim and Wasim Orfali, 2016, "Temperature-dependent dynamic moduli of Parylene-C columnar microfibrous thin films", POLYMER TESTING, 53, pp. 89-97
  • Chandraprakash Chindam, Nichole M Wonderling, Akhlesh Lakhtakia, Osama O Awadelkarim and Wasim Orfali, 2015, "Microfiber inclination, crystallinity, and water wettability of microfibrous thin-film substrates of Parylene C in relation to the direction of the monomer vapor during fabrication", APPLIED SURFACE SCIENCE, 345, pp. 145-155
  • Chandraprakash Chindam, Akhlesh Lakhtakia, Osama O Awadelkarim and Wasim Orfali, 2015, "Relative permittivity of bulk Parylene-C polymer in the infrared regime", JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS, 29, (16), pp. 2139-2146
  • Chandraprakash Chindam, Akhlesh Lakhtakia and Osama O Awadelkarim, 2015, "Surface energy of Parylene C", MATERIALS LETTERS, 153, pp. 18-19
  • Chandraprakash Chindam, Akhlesh Lakhtakia, Osama O Awadelkarim and Wasim Orfali, 2014, "Acoustic scattering from microfibers of Parylene C", JOURNAL OF APPLIED PHYSICS, 116, (13)
  • Chandraprakash Chindam, Akhlesh Lakhtakia, Nicole Brown, Wasim Orfali and Osama O Awadelkarim, 2014, "Frequency- and temperature-dependent storage and loss moduli of microfibrous thin films of Parylene C", MATERIALS LETTERS, 116, pp. 296-298
  • J. Hao, M. Rioux, Samia A Suliman and Osama O Awadelkarim, 2014, "High temperature bias-stress-induced instability in power trench-gated MOSFETs", MICROELECTRONICS RELIABILITY, 54, (2), pp. 374-380
  • K. Sarpatwari, Suzanne E Mohney and Osama O Awadelkarim, 2011, "Effects of barrier height inhomogeneities on the determination of the Richardson constant", JOURNAL OF APPLIED PHYSICS, 109, (1)
  • K. Sarpatwari, Osama O Awadelkarim, Lucas Passmore, T. -T. Ho, M. -W. Kuo, N. S. Dellas, Theresa S Mayer and Suzanne E Mohney, 2011, "Low-Frequency Three-Terminal Charge Pumping Applied to Silicon Nanowire Field-Effect Transistors", IEEE TRANSACTIONS ON NANOTECHNOLOGY, 10, (4), pp. 871-874
  • K. Sarpatwari, N. S. Dellas, Osama O Awadelkarim and Suzanne E Mohney, 2010, "Extracting the Schottky barrier height from axial contacts to semiconductor nanowires", SOLID-STATE ELECTRONICS, 54, (7), pp. 689-695
  • Lucas J. Passmore, Osama O Awadelkarim and Joseph P Cusumano, 2010, "High-Sensitivity Tracking of MOSFET Damage Using Dynamic-Mode Transient Measurements", IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 59, (6), pp. 1734-1742
  • K. Sarpatwari, Suzanne E Mohney, S Ashok and Osama O Awadelkarim, 2010, "Minority carrier injection limited current in Re/4H-SiC Schottky diodes", PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207, (6), pp. 1509-1513
  • K. Sarpatwari, Osama O Awadelkarim, M. W. Allen, S. M. Durbin and Suzanne E Mohney, 2009, "Extracting the Richardson constant: IrOx/n-ZnO Schottky diodes", APPLIED PHYSICS LETTERS, 94, (24)
  • K. Sarpatwar, Lucas Passmore, Samia A Suliman and Osama O Awadelkarim, 2007, "Analysis of current-voltage-temperature characteristics in SiC Schottky diodes using threshold-accepting simulated-annealing techniques", SOLID-STATE ELECTRONICS, 51, (5), pp. 644-649
  • L. J. Passmore, K. Sarpatwari, S. A. Suliman, Osama O Awadelkarim, R. S. Ridley, G. M. Dolny, J. Michalowicz and C.-T. Wu, 2006, "Current-voltage characteristics and charge-carrier taps in n-type 4H-SiC Schottky structures", Proceedings of the International Workshop on Junction Technology
  • LJ Passmore, K Sarpatwari, SA Suliman, OO Awadelkarim, R Ridley, G Dolny, J Michalowicz and CT Wu, 2006, "Fowler-Nordheim and hot carrier reliabilities of U-shaped trench-gated transistors studied by three terminal charge pumping", THIN SOLID FILMS, 504, (1-2), pp. 302-306
  • LJ Passmore, K Sarpatwari, SA Suliman, OO Awadelkarim, R Ridley, G Dolny, J Michalowicz and CT Wu, 2005, "Modified three terminal charge pumping technique applied to vertical transistor structures", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 23, (5), pp. 2189-2193
  • SA Suliman, OO Awadelkarim, RS Ridley and GM Dolny, 2004, "Gate-oxide grown on the sidewalls and base of a U-shaped Si trench: effects of the oxide and oxide/Si interface condition on the properties of vertical MOS devices", MICROELECTRONIC ENGINEERING, 72, (1-4), pp. 247-252
  • L Trabzon and OO Awadelkarim, 2003, "Changes in material properties of low-k interlayer dielectric polymers induced by exposure to plasmas", MICROELECTRONIC ENGINEERING, 65, (4), pp. 463-477
  • SA Suliman, B Venkataraman, CT Wu, RS Ridley, GM Dolny, OO Awadelkarim, SJ Fonash and Jerzy Ruzyllo, 2003, "Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition", SOLID-STATE ELECTRONICS, 47, (5), pp. 899-905
  • SA Suliman, OO Awadelkarim, SJ Fonash, RS Ridley, GM Dolny, J Hao and CM Knoedler, 2002, "Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench", SOLID-STATE ELECTRONICS, 46, (6), pp. 837-845
  • J Jiang, OO Awadelkarim, DO Lee, P Roman and Jerzy Ruzyllo, 2002, "On the capacitance of metal/high-k dielectric material stack/silicon structures", SOLID-STATE ELECTRONICS, 46, (11), pp. 1991-1995
  • SA Suliman, N Gollagunta, L Trabzon, J Hao, RS Ridley, CM Knoedler, GM Dolny, OO Awadelkarim and SJ Fonash, 2001, "The dependence of UMOSFET characteristics and reliability on geometry and processing", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 16, (6), pp. 447-454
  • SA Suliman, OO Awadelkarim, SJ Fonash, GM Dolny, J Hao, RS Ridley and CM Knoedler, 2001, "The effects of channel boron-doping on the performance and hot electron reliability of N-channel trend UMOSFETs", SOLID-STATE ELECTRONICS, 45, (5), pp. 655-661
  • L Trabzon, OO Awadelkarim and J Werking, 1999, "Dependence of the performance and reliability of n-metal-oxide-silicon field effect transistors on interlayer dielectric processing", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 17, (5), pp. 2216-2221
  • YZ Wang and OO Awadelkarim, 1999, "Polycrystalline silicon/dielectric/substrate material systems for thin film transistor applications: The impact of material properties on transistors' characteristics", PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 176, (2), pp. 885-909
  • OO Awadelkarim and YZ Wang, 1999, "The impact of RCA treatment of glass substrates on the properties of polycrystalline silicon thin him transistors", MICROELECTRONIC ENGINEERING, 45, (4), pp. 299-310
  • WM Chen, OO Awadelkarim, B Monemar, JL Lindstrom and GS Oehrlein, 1998, "Comment on "Microscopic identification and electronic structure of a di-hydrogen-vacancy complex in silicon by optical detection of magnetic resonance" - Reply", PHYSICAL REVIEW LETTERS, 80, (2), pp. 423-423
  • L Trabzon and OO Awadelkarim, 1998, "Damage to n-MOSFETs from electrical stress relationship to processing damage and impact on device reliability", MICROELECTRONICS AND RELIABILITY, 38, (4), pp. 651-657
  • J Jiang, OO Awadelkarim and J Werking, 1998, "Gate leakage current: A sensitive characterization parameter for plasma-induced damage detection in ultrathin oxide submicron transistors", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 16, (3), pp. 1664-1669
  • El Hassan, MG, OO Awadelkarim and J Werking, 1998, "Observation of channel shortening in n-metal-oxide-semiconductor field-effect transistors arising from interconnect plasma processing", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 16, (3), pp. 1435-1439
  • YZ Wang and OO Awadelkarim, 1998, "Polycrystalline silicon thin films formed by metal-induced solid phase crystallization of amorphous silicon", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 16, (6), pp. 3352-3358
  • L Trabzon, OO Awadelkarim and J Werking, 1998, "The effects of interlayer dielectric deposition and processing on the reliability of N-channel transistors", SOLID-STATE ELECTRONICS, 42, (11), pp. 2031-2037
  • YZ Wang and OO Awadelkarim, 1998, "The effects of SiO2 barrier between active layer and substrate on the performance and reliability of polycrystalline silicon thin film transistors", MICROELECTRONICS RELIABILITY, 38, (12), pp. 1835-1846
  • YZ Wang, OO Awadelkarim, JG Couillard and DG Ast, 1998, "The effects of substrates on the characteristics of polycrystalline silicon thin film transistors", SOLID-STATE ELECTRONICS, 42, (9), pp. 1689-1696
  • El Hassan, MG, OO Awadelkarim and JD Werking, 1998, "The impact of metal-1 plasma processing-induced hot carrier injection on the characteristics and reliability of n-MOSFET's", IEEE TRANSACTIONS ON ELECTRON DEVICES, 45, (4), pp. 861-866
  • J Jiang, OO Awadelkarim and YD Chan, 1997, "A study of carrier-trap generation by Fowler-Nordheim tunneling stress on polycrystalline-silicon/SiO2/silicon structures", SOLID-STATE ELECTRONICS, 41, (1), pp. 41-46
  • L Trabzon, OO Awadelkarim, J Werking, G Bersuker and YD Chan, 1997, "Comparison between direct current and sinusoidal current stressing of gate oxides and oxide/silicon interfaces in metal-oxide-silicon field-effect transistors", JOURNAL OF APPLIED PHYSICS, 81, (3), pp. 1575-1580
  • L Trabzon and OO Awadelkarim, 1997, "Electrical-stress simulation of plasma-damage to submicron metal-oxide-silicon field-effect transistors: Comparison between direct current and alternating current stresses", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 15, (3), pp. 692-696
  • J Jiang, OO Awadelkarim, J Werking, G Bersuker and YD Chan, 1997, "Fowler-Nordheim stressing of polycrystalline Si oxide Si structures: Observation of stress induced defects in the oxide, oxide/Si interface, and in bulk silicon", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 15, (3), pp. 875-879
  • A Salah, OO Awadelkarim, J Werking, G Bersuker and YD Chan, 1996, "A comparison between plasma charging-damage and inductive-damage: Damage response to Fowler-Nordheim stress", SOLID-STATE ELECTRONICS, 39, (12), pp. 1701-1707
  • SJ Fonash, M Ozaita and OO Awadelkarim, 1996, "Detection and comparison of localized states produced in poly-Si ultra-thin oxide silicon, structures by plasma exposure or plasma charging during reactive ion etching", JOURNAL OF APPLIED PHYSICS, 79, (4), pp. 2091-2096
  • A Salah, OO Awadelkarim, F Preuninger and YD Chan, 1996, "Observation of a new type of plasma etching damage: Damage to N-channel transistors arising from inductive metal loops", APPLIED PHYSICS LETTERS, 68, (12), pp. 1690-1692
  • OO Awadelkarim, SJ Fonash, PI Mikulan and YD Chan, 1996, "Plasma-charging damage to gate SiO2 and SiO2/Si interfaces in submicron n-channel transistors: Latent defects and passivation/depassivation of defects by hydrogen", JOURNAL OF APPLIED PHYSICS, 79, (1), pp. 517-525
  • L Trabzon, OO Awadelkarim, J Werking, G Bersuker and YD Chan, 1996, "Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-mu m n-MOSFET's", IEEE ELECTRON DEVICE LETTERS, 17, (12), pp. 569-571
  • M Okandan, SJ Fonash, OO Awadelkarim, YD Chan and F Preuninger, 1996, "Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure", IEEE ELECTRON DEVICE LETTERS, 17, (8), pp. 388-390
  • OO AWADELKARIM, SJ FONASH, PI MIKULAN, M OZAITA and YD CHAN, 1995, "HYDROGEN AND PROCESSING DAMAGE IN CMOS DEVICE RELIABILITY - DEFECT PASSIVATION AND DEPASSIVATION DURING PLASMA EXPOSURES AND SUBSEQUENT ANNEALING", MICROELECTRONIC ENGINEERING, 28, (1-4), pp. 47-50
  • T GU, OO AWADELKARIM, SJ FONASH and YD CHAN, 1994, "DEGRADATION OF SUBMICRON N-CHANNEL MOSFET HOT-ELECTRON RELIABILITY DUE TO EDGE DAMAGE FROM POLYSILICON GATE PLASMA-ETCHING", IEEE ELECTRON DEVICE LETTERS, 15, (10), pp. 396-398
  • OO AWADELKARIM, PI MIKULAN, T GU, KA REINHARDT and YD CHAN, 1994, "ELECTRICAL-PROPERTIES OF CONTACT ETCHED P-SI - A COMPARISON BETWEEN MAGNETICALLY ENHANCED AND CONVENTIONAL REACTIVE ION ETCHING", JOURNAL OF APPLIED PHYSICS, 76, (4), pp. 2270-2278
  • OO AWADELKARIM, PI MIKULAN, T GU, RA DITIZIO and SJ FONASH, 1994, "HYDROGEN PERMEATION, SI DEFECT GENERATION, AND THEIR INTERACTION DURING CHF3/O-2 CONTACT ETCHING", IEEE ELECTRON DEVICE LETTERS, 15, (3), pp. 85-87
  • JF REMBETSKI, YD CHAN, E BODEN, T GU, OO AWADELKARIM, RA DITIZIO, SJ FONASH, XY LI and CR VISWANATHAN, 1993, "A COMPARISON OF CL2 AND HBR/CL2-BASED POLYSILICON ETCH CHEMISTRIES - IMPACT ON SIO2 AND SI SUBSTRATE DAMAGE", JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 32, (6B), pp. 3023-3028
  • OO AWADELKARIM, T GU, RA DITIZIO, PI MIKULAN, SJ FONASH, JF REMBETSKI and YD CHAN, 1993, "ELECTRICAL CHARACTERIZATION OF THE SI SUBSTRATE IN MAGNETICALLY ENHANCED OR CONVENTIONAL REACTIVE-ION-ETCH-EXPOSED SIO2/P-SI STRUCTURES", IEEE ELECTRON DEVICE LETTERS, 14, (4), pp. 167-169
  • OO AWADELKARIM, T GU, PI MIKULAN, RA DITIZIO, SJ FONASH, KA REINHARDT and YD CHAN, 1993, "ELECTRONIC STATES CREATED IN P-SI SUBJECTED TO PLASMA-ETCHING - THE ROLE OF INHERENT IMPURITIES, POINT-DEFECTS, AND HYDROGEN", APPLIED PHYSICS LETTERS, 62, (9), pp. 958-960
  • A HENRY, OO AWADELKARIM, C HALLIN, JL LINDSTROM and GS OEHRLEIN, 1991, "ELECTRICAL STUDIES ON ANNEALED D2 PLASMA-EXPOSED SILICON", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 138, (5), pp. 1456-1460
  • OO AWADELKARIM, SA SULIMAN, B MONEMAR, JL LINDSTROM, Yang Zhang and JW CORBETT, 1990, "DEFECTS STATES IN CARBON AND OXYGEN IMPLANTED P-TYPE SILICON", JOURNAL OF APPLIED PHYSICS, 67, (1), pp. 270-275
  • WM CHEN, OO AWADELKARIM, H WEMAN and B MONEMAR, 1990, "INTENSITY OF EXCITON LUMINESCENCE IN SILICON IN A WEAK MAGNETIC-FIELD", PHYSICAL REVIEW B, 42, (8), pp. 5120-5125
  • WM CHEN, OO AWADELKARIM, B MONEMAR, JL LINDSTROM and GS OEHRLEIN, 1990, "MICROSCOPIC IDENTIFICATION AND ELECTRONIC-STRUCTURE OF A DI-HYDROGEN VACANCY COMPLEX IN SILICON BY OPTICAL-DETECTION OF MAGNETIC-RESONANCE", PHYSICAL REVIEW LETTERS, 64, (25), pp. 3042-3045
  • OO AWADELKARIM, A HENRY, B MONEMAR and JL LINDSTROM, 1990, "THE ROLE OF GROUP-V IMPURITIES IN DEFECT FORMATION IN IRRADIATED SILICON", PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 120, (2), pp. 539-546
  • OO AWADELKARIM and B MONEMAR, 1989, "DEFECT STATES IN 2.0-MEV ELECTRON-IRRADIATED PHOSPHORUS-DOPED SILICON", JOURNAL OF APPLIED PHYSICS, 65, (12), pp. 4779-4788
  • A HENRY, OO AWADELKARIM, JL LINDSTROM and GS OEHRLEIN, 1989, "EFFECTS OF DEUTERIUM PLASMA TREATMENTS ON THE ELECTRICAL-PROPERTIES OF BORON-DOPED SILICON", MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 4, (1-4), pp. 147-151
  • H WEMAN, A HENRY, T BEGUM, B MONEMAR, OO AWADELKARIM and JL LINDSTROM, 1989, "ELECTRICAL AND OPTICAL-PROPERTIES OF GOLD-DOPED N-TYPE SILICON", JOURNAL OF APPLIED PHYSICS, 65, (1), pp. 137-145
  • A HENRY, OO AWADELKARIM, JL LINDSTROM and GS OEHRLEIN, 1989, "ELECTRICAL STUDIES ON PLASMA AND REACTIVE-ION-ETCHED SILICON", JOURNAL OF APPLIED PHYSICS, 66, (11), pp. 5388-5393
  • NA SALIH, OO AWADELKARIM, AH OSMAN and GM ISKANDER, 1989, "ESR STUDY OF X-IRRADIATED, 1,4-BENZO[B]THIAZINE (2) SINGLE-CRYSTALS", CHEMICA SCRIPTA, 29, (2), pp. 181-184
  • OO AWADELKARIM, SA SULIMAN and B MONEMAR, 1989, "ON THE 0.34 EV HOLE TRAP IN IRRADIATED BORON-DOPED SILICON", RADIATION EFFECTS AND DEFECTS IN SOLIDS, 112, (1-2), pp. 273-280
  • OO AWADELKARIM and B MONEMAR, 1988, "A STUDY OF IRON-RELATED CENTERS IN HEAVILY BORON-DOPED SILICON BY DEEP-LEVEL TRANSIENT SPECTROSCOPY", JOURNAL OF APPLIED PHYSICS, 64, (11), pp. 6306-6310
  • OO AWADELKARIM, 1988, "DIVACANCIES PRODUCTION IN IRRADIATED N-TYPE SILICON", PHYSICA B & C, 150, (3), pp. 312-318
  • Osama O Awadelkarim, O CLAESSON and A LUND, 1988, "FREE-RADICALS IN X-IRRADIATED ETHYLENE-GLYCOL CRYSTALS", ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, 43, (7), pp. 633-637
  • OO AWADELKARIM and B MONEMAR, 1988, "RADIATION-INDUCED DEFECT STATES IN LOW TO MODERATELY BORON-DOPED SILICON", JOURNAL OF APPLIED PHYSICS, 64, (11), pp. 6301-6305

Research Projects

  • September 2022 - August 2026, "Microelectronics and Nanomanufacturing Partnership for Veterans," (Sponsor: National Science Foundation).
  • September 2023 - August 2026, "Northeast Consortia for Advanced Integrated Silicon Technologies," (Sponsor: SUNY Polytechnic Institute).
  • October 2023 - September 2026, "Collaborative Research: Development of a Nanofabrication Lab Manual Featuring a Suite of Low-Cost Experiments to Enable Hands-On Training at Community and Technical Colleges," (Sponsor: National Science Foundation).
  • April 2024 - August 2026, "Supplement I : Microelectronics and Nanomanufacturing for Veterans Partnership," (Sponsor: NSF).
  •  2025 -  2025, "Nanotechnology Manufacturing Technology (NMT) Capstone Semester," (Sponsor: None).
  • September 2020 - August 2025, "The Nanotechnology Applications and Career Knowledge (NACK) Resource Center: Request for Renewal," (Sponsor: National Science Foundation).
  •  2024 -  , "Nanotechnology Manufacturing Technology (NMT) Capstone Semester," (Sponsor: None).

Honors and Awards

  • UNESCO Chair on "Building Innovation and Manufacturing Capacities through Advanced Technology Education" at the Pennsylvania State University, UNESCO, August 2018
  • Jefferson Science Fellow, The United States Department of State, July 2006
  • Fellowship of the International Seminars in Physics and Chemistry (SWEDEN), July 1984 - May 1986

Service

Service to Penn State:

  • Academic Leadership and Support Work, Advisor, MS in Engineering at the Nanoscale, August 2017
  • Academic Leadership and Support Work, Director, • Director, the Center for Nanotechnology Education and Utilization (CNEU) & the NSF Nanotechnology Applications and Career Knowledge (NACK) Network, the Pennsylvania State University., January 2015

Service to External Organizations:

  • Service to Public and Private Organizations, Other, Vice President, • Vice President of the International Commission for Development of UNESCO’s Encyclopedia Of Life Support Systems (UNESCO/EOLSS) Theme on Nanoscience and Nanotechnologies, (http://www.eolss.net), UNESCO, September 2009
  • Service to Governmental Agencies, Advisor, • Senior Science and Technology Advisor, U. S. Department of State, since 2006., September 2006
 


 

About

The Penn State Department of Engineering Science and Mechanics (ESM) is an internationally distinguished department that is recognized for its globally competitive excellence in engineering and scientific accomplishments, research, and educational leadership.

Our Engineering Science program is the official undergraduate honors program of the College of Engineering, attracting the University’s brightest engineering students. We also offer graduate degrees in ESM, engineering mechanics, engineering at the nano-scale, and an integrated undergraduate/graduate program.

Department of Engineering Science and Mechanics

212 Earth and Engineering Sciences Building

The Pennsylvania State University

University Park, PA 16802

Phone: 814-865-4523