Photo of Osama Awadelkarim

Osama Awadelkarim

UNESCO Chair Professor and Director of the Center for Nanotechnology Education and Utilization

Affiliation(s):

  • Engineering Science and Mechanics
  • Center for Nanotechnology Education and Utilization

309E Earth and Engineering Sciences Building

ooa1@psu.edu

814-863-1773

Research Areas:

Advanced Materials and Devices; Emerging Manufacturing Processes for Materials, Tissues, and Devices; Nanoscience, Bionanoscience and Engineering

Interest Areas:

Nano-fabrication; microelectronics materials/devices; power electronic devices; IC Processing; Defects in crystalline/polycrystalline semiconductor materials; Thin film transistors - active matrix liquid crystal display application; MEMS/nanofabrication.

 
 

 

Education

  • Ph D, J. J. Thomson Physical Laboratory, Reading University, United Kingdom

Publications

Books

  • Julian W. Gardner, Vivjay K. Varadan and Osama O Awadelkarim, 2001, Microsensors, MEMS, and Smart Devices, John Wiley & Sons, Ltd.

Journal Articles

  • Ibrahim H. Khawaji, Osama O Awadelkarim and Akhlesh Lakhtakia, 2019, "Effects of Constant-Voltage Stress on the Stability of Parylene-C Columnar Microfibrous Thin Films", IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 26, (1), pp. 270-275
  • Ibrahim H. Khawaji, Chandraprakash Chindam, Osama O Awadelkarim and Akhlesh Lakhtakia, 2017, "Dielectric Properties of and Charge Transport in Columnar Microfibrous Thin Films of Parylene C", IEEE TRANSACTIONS ON ELECTRON DEVICES, 64, (8), pp. 3360-3367
  • Chandraprakash Chindam, Akhlesh Lakhtakia and Osama O Awadelkarim, 2017, "Parylene-C microfibrous thin films as phononic crystals", JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 27, (7)
  • Ibrahim H. Khawaji, Chandraprakash Chindam, Osama O Awadelkarim and Akhlesh Lakhtakia, 2017, "Selectablity of mechanical and dielectric properties of Parylene-C columnar microfibrous thin films by varying deposition angle", FLEXIBLE AND PRINTED ELECTRONICS, 2, (4)
  • Chandraprakash Chindam, Akhlesh Lakhtakia and Osama O Awadelkarim, 2016, "Reply to "Comment on 'Surface energy of Parylene C'"", MATERIALS LETTERS, 166, pp. 325-326
  • Chandraprakash Chindam, Nicole Brown, Akhlesh Lakhtakia, Osama O Awadelkarim and Wasim Orfali, 2016, "Temperature-dependent dynamic moduli of Parylene-C columnar microfibrous thin films", POLYMER TESTING, 53, pp. 89-97
  • Chandraprakash Chindam, Nichole M Wonderling, Akhlesh Lakhtakia, Osama O Awadelkarim and Wasim Orfali, 2015, "Microfiber inclination, crystallinity, and water wettability of microfibrous thin-film substrates of Parylene C in relation to the direction of the monomer vapor during fabrication", APPLIED SURFACE SCIENCE, 345, pp. 145-155
  • Chandraprakash Chindam, Akhlesh Lakhtakia, Osama O Awadelkarim and Wasim Orfali, 2015, "Relative permittivity of bulk Parylene-C polymer in the infrared regime", JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS, 29, (16), pp. 2139-2146
  • Chandraprakash Chindam, Akhlesh Lakhtakia and Osama O Awadelkarim, 2015, "Surface energy of Parylene C", MATERIALS LETTERS, 153, pp. 18-19
  • Chandraprakash Chindam, Akhlesh Lakhtakia, Osama O Awadelkarim and Wasim Orfali, 2014, "Acoustic scattering from microfibers of Parylene C", JOURNAL OF APPLIED PHYSICS, 116, (13)
  • Chandraprakash Chindam, Akhlesh Lakhtakia, Nicole Brown, Wasim Orfali and Osama O Awadelkarim, 2014, "Frequency- and temperature-dependent storage and loss moduli of microfibrous thin films of Parylene C", MATERIALS LETTERS, 116, pp. 296-298
  • J. Hao, M. Rioux, Samia A Suliman and Osama O Awadelkarim, 2014, "High temperature bias-stress-induced instability in power trench-gated MOSFETs", MICROELECTRONICS RELIABILITY, 54, (2), pp. 374-380
  • K. Sarpatwari, Suzanne E Mohney and Osama O Awadelkarim, 2011, "Effects of barrier height inhomogeneities on the determination of the Richardson constant", JOURNAL OF APPLIED PHYSICS, 109, (1)
  • K. Sarpatwari, Osama O Awadelkarim, Lucas Passmore, T. -T. Ho, M. -W. Kuo, N. S. Dellas, Theresa S Mayer and Suzanne E Mohney, 2011, "Low-Frequency Three-Terminal Charge Pumping Applied to Silicon Nanowire Field-Effect Transistors", IEEE TRANSACTIONS ON NANOTECHNOLOGY, 10, (4), pp. 871-874
  • K. Sarpatwari, N. S. Dellas, Osama O Awadelkarim and Suzanne E Mohney, 2010, "Extracting the Schottky barrier height from axial contacts to semiconductor nanowires", SOLID-STATE ELECTRONICS, 54, (7), pp. 689-695
  • Lucas J. Passmore, Osama O Awadelkarim and Joseph P Cusumano, 2010, "High-Sensitivity Tracking of MOSFET Damage Using Dynamic-Mode Transient Measurements", IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 59, (6), pp. 1734-1742
  • K. Sarpatwari, Suzanne E Mohney, S Ashok and Osama O Awadelkarim, 2010, "Minority carrier injection limited current in Re/4H-SiC Schottky diodes", PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207, (6), pp. 1509-1513
  • K. Sarpatwari, Osama O Awadelkarim, M. W. Allen, S. M. Durbin and Suzanne E Mohney, 2009, "Extracting the Richardson constant: IrOx/n-ZnO Schottky diodes", APPLIED PHYSICS LETTERS, 94, (24)
  • K. Sarpatwar, Lucas Passmore, Samia A Suliman and Osama O Awadelkarim, 2007, "Analysis of current-voltage-temperature characteristics in SiC Schottky diodes using threshold-accepting simulated-annealing techniques", SOLID-STATE ELECTRONICS, 51, (5), pp. 644-649
  • L. J. Passmore, K. Sarpatwari, S. A. Suliman, Osama O Awadelkarim, R. S. Ridley, G. M. Dolny, J. Michalowicz and C.-T. Wu, 2006, "Current-voltage characteristics and charge-carrier taps in n-type 4H-SiC Schottky structures", Proceedings of the International Workshop on Junction Technology
  • LJ Passmore, K Sarpatwari, SA Suliman, OO Awadelkarim, R Ridley, G Dolny, J Michalowicz and CT Wu, 2006, "Fowler-Nordheim and hot carrier reliabilities of U-shaped trench-gated transistors studied by three terminal charge pumping", THIN SOLID FILMS, 504, (1-2), pp. 302-306
  • LJ Passmore, K Sarpatwari, SA Suliman, OO Awadelkarim, R Ridley, G Dolny, J Michalowicz and CT Wu, 2005, "Modified three terminal charge pumping technique applied to vertical transistor structures", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 23, (5), pp. 2189-2193
  • SA Suliman, OO Awadelkarim, RS Ridley and GM Dolny, 2004, "Gate-oxide grown on the sidewalls and base of a U-shaped Si trench: effects of the oxide and oxide/Si interface condition on the properties of vertical MOS devices", MICROELECTRONIC ENGINEERING, 72, (1-4), pp. 247-252
  • L Trabzon and OO Awadelkarim, 2003, "Changes in material properties of low-k interlayer dielectric polymers induced by exposure to plasmas", MICROELECTRONIC ENGINEERING, 65, (4), pp. 463-477
  • SA Suliman, B Venkataraman, CT Wu, RS Ridley, GM Dolny, OO Awadelkarim, SJ Fonash and Jerzy Ruzyllo, 2003, "Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition", SOLID-STATE ELECTRONICS, 47, (5), pp. 899-905
  • SA Suliman, OO Awadelkarim, SJ Fonash, RS Ridley, GM Dolny, J Hao and CM Knoedler, 2002, "Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench", SOLID-STATE ELECTRONICS, 46, (6), pp. 837-845
  • J Jiang, OO Awadelkarim, DO Lee, P Roman and Jerzy Ruzyllo, 2002, "On the capacitance of metal/high-k dielectric material stack/silicon structures", SOLID-STATE ELECTRONICS, 46, (11), pp. 1991-1995
  • SA Suliman, N Gollagunta, L Trabzon, J Hao, RS Ridley, CM Knoedler, GM Dolny, OO Awadelkarim and SJ Fonash, 2001, "The dependence of UMOSFET characteristics and reliability on geometry and processing", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 16, (6), pp. 447-454
  • SA Suliman, OO Awadelkarim, SJ Fonash, GM Dolny, J Hao, RS Ridley and CM Knoedler, 2001, "The effects of channel boron-doping on the performance and hot electron reliability of N-channel trend UMOSFETs", SOLID-STATE ELECTRONICS, 45, (5), pp. 655-661
  • L Trabzon, OO Awadelkarim and J Werking, 1999, "Dependence of the performance and reliability of n-metal-oxide-silicon field effect transistors on interlayer dielectric processing", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 17, (5), pp. 2216-2221
  • YZ Wang and OO Awadelkarim, 1999, "Polycrystalline silicon/dielectric/substrate material systems for thin film transistor applications: The impact of material properties on transistors' characteristics", PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 176, (2), pp. 885-909
  • OO Awadelkarim and YZ Wang, 1999, "The impact of RCA treatment of glass substrates on the properties of polycrystalline silicon thin him transistors", MICROELECTRONIC ENGINEERING, 45, (4), pp. 299-310
  • WM Chen, OO Awadelkarim, B Monemar, JL Lindstrom and GS Oehrlein, 1998, "Comment on "Microscopic identification and electronic structure of a di-hydrogen-vacancy complex in silicon by optical detection of magnetic resonance" - Reply", PHYSICAL REVIEW LETTERS, 80, (2), pp. 423-423
  • L Trabzon and OO Awadelkarim, 1998, "Damage to n-MOSFETs from electrical stress relationship to processing damage and impact on device reliability", MICROELECTRONICS AND RELIABILITY, 38, (4), pp. 651-657
  • J Jiang, OO Awadelkarim and J Werking, 1998, "Gate leakage current: A sensitive characterization parameter for plasma-induced damage detection in ultrathin oxide submicron transistors", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 16, (3), pp. 1664-1669
  • El Hassan, MG, OO Awadelkarim and J Werking, 1998, "Observation of channel shortening in n-metal-oxide-semiconductor field-effect transistors arising from interconnect plasma processing", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 16, (3), pp. 1435-1439
  • YZ Wang and OO Awadelkarim, 1998, "Polycrystalline silicon thin films formed by metal-induced solid phase crystallization of amorphous silicon", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 16, (6), pp. 3352-3358
  • L Trabzon, OO Awadelkarim and J Werking, 1998, "The effects of interlayer dielectric deposition and processing on the reliability of N-channel transistors", SOLID-STATE ELECTRONICS, 42, (11), pp. 2031-2037
  • YZ Wang and OO Awadelkarim, 1998, "The effects of SiO2 barrier between active layer and substrate on the performance and reliability of polycrystalline silicon thin film transistors", MICROELECTRONICS RELIABILITY, 38, (12), pp. 1835-1846
  • YZ Wang, OO Awadelkarim, JG Couillard and DG Ast, 1998, "The effects of substrates on the characteristics of polycrystalline silicon thin film transistors", SOLID-STATE ELECTRONICS, 42, (9), pp. 1689-1696
  • El Hassan, MG, OO Awadelkarim and JD Werking, 1998, "The impact of metal-1 plasma processing-induced hot carrier injection on the characteristics and reliability of n-MOSFET's", IEEE TRANSACTIONS ON ELECTRON DEVICES, 45, (4), pp. 861-866
  • J Jiang, OO Awadelkarim and YD Chan, 1997, "A study of carrier-trap generation by Fowler-Nordheim tunneling stress on polycrystalline-silicon/SiO2/silicon structures", SOLID-STATE ELECTRONICS, 41, (1), pp. 41-46
  • L Trabzon, OO Awadelkarim, J Werking, G Bersuker and YD Chan, 1997, "Comparison between direct current and sinusoidal current stressing of gate oxides and oxide/silicon interfaces in metal-oxide-silicon field-effect transistors", JOURNAL OF APPLIED PHYSICS, 81, (3), pp. 1575-1580
  • L Trabzon and OO Awadelkarim, 1997, "Electrical-stress simulation of plasma-damage to submicron metal-oxide-silicon field-effect transistors: Comparison between direct current and alternating current stresses", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 15, (3), pp. 692-696
  • J Jiang, OO Awadelkarim, J Werking, G Bersuker and YD Chan, 1997, "Fowler-Nordheim stressing of polycrystalline Si oxide Si structures: Observation of stress induced defects in the oxide, oxide/Si interface, and in bulk silicon", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 15, (3), pp. 875-879
  • A Salah, OO Awadelkarim, J Werking, G Bersuker and YD Chan, 1996, "A comparison between plasma charging-damage and inductive-damage: Damage response to Fowler-Nordheim stress", SOLID-STATE ELECTRONICS, 39, (12), pp. 1701-1707
  • SJ Fonash, M Ozaita and OO Awadelkarim, 1996, "Detection and comparison of localized states produced in poly-Si ultra-thin oxide silicon, structures by plasma exposure or plasma charging during reactive ion etching", JOURNAL OF APPLIED PHYSICS, 79, (4), pp. 2091-2096
  • A Salah, OO Awadelkarim, F Preuninger and YD Chan, 1996, "Observation of a new type of plasma etching damage: Damage to N-channel transistors arising from inductive metal loops", APPLIED PHYSICS LETTERS, 68, (12), pp. 1690-1692
  • OO Awadelkarim, SJ Fonash, PI Mikulan and YD Chan, 1996, "Plasma-charging damage to gate SiO2 and SiO2/Si interfaces in submicron n-channel transistors: Latent defects and passivation/depassivation of defects by hydrogen", JOURNAL OF APPLIED PHYSICS, 79, (1), pp. 517-525
  • L Trabzon, OO Awadelkarim, J Werking, G Bersuker and YD Chan, 1996, "Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-mu m n-MOSFET's", IEEE ELECTRON DEVICE LETTERS, 17, (12), pp. 569-571
  • M Okandan, SJ Fonash, OO Awadelkarim, YD Chan and F Preuninger, 1996, "Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure", IEEE ELECTRON DEVICE LETTERS, 17, (8), pp. 388-390
  • OO AWADELKARIM, SJ FONASH, PI MIKULAN, M OZAITA and YD CHAN, 1995, "HYDROGEN AND PROCESSING DAMAGE IN CMOS DEVICE RELIABILITY - DEFECT PASSIVATION AND DEPASSIVATION DURING PLASMA EXPOSURES AND SUBSEQUENT ANNEALING", MICROELECTRONIC ENGINEERING, 28, (1-4), pp. 47-50
  • T GU, OO AWADELKARIM, SJ FONASH and YD CHAN, 1994, "DEGRADATION OF SUBMICRON N-CHANNEL MOSFET HOT-ELECTRON RELIABILITY DUE TO EDGE DAMAGE FROM POLYSILICON GATE PLASMA-ETCHING", IEEE ELECTRON DEVICE LETTERS, 15, (10), pp. 396-398
  • OO AWADELKARIM, PI MIKULAN, T GU, KA REINHARDT and YD CHAN, 1994, "ELECTRICAL-PROPERTIES OF CONTACT ETCHED P-SI - A COMPARISON BETWEEN MAGNETICALLY ENHANCED AND CONVENTIONAL REACTIVE ION ETCHING", JOURNAL OF APPLIED PHYSICS, 76, (4), pp. 2270-2278
  • OO AWADELKARIM, PI MIKULAN, T GU, RA DITIZIO and SJ FONASH, 1994, "HYDROGEN PERMEATION, SI DEFECT GENERATION, AND THEIR INTERACTION DURING CHF3/O-2 CONTACT ETCHING", IEEE ELECTRON DEVICE LETTERS, 15, (3), pp. 85-87
  • JF REMBETSKI, YD CHAN, E BODEN, T GU, OO AWADELKARIM, RA DITIZIO, SJ FONASH, XY LI and CR VISWANATHAN, 1993, "A COMPARISON OF CL2 AND HBR/CL2-BASED POLYSILICON ETCH CHEMISTRIES - IMPACT ON SIO2 AND SI SUBSTRATE DAMAGE", JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 32, (6B), pp. 3023-3028
  • OO AWADELKARIM, T GU, RA DITIZIO, PI MIKULAN, SJ FONASH, JF REMBETSKI and YD CHAN, 1993, "ELECTRICAL CHARACTERIZATION OF THE SI SUBSTRATE IN MAGNETICALLY ENHANCED OR CONVENTIONAL REACTIVE-ION-ETCH-EXPOSED SIO2/P-SI STRUCTURES", IEEE ELECTRON DEVICE LETTERS, 14, (4), pp. 167-169
  • OO AWADELKARIM, T GU, PI MIKULAN, RA DITIZIO, SJ FONASH, KA REINHARDT and YD CHAN, 1993, "ELECTRONIC STATES CREATED IN P-SI SUBJECTED TO PLASMA-ETCHING - THE ROLE OF INHERENT IMPURITIES, POINT-DEFECTS, AND HYDROGEN", APPLIED PHYSICS LETTERS, 62, (9), pp. 958-960
  • A HENRY, OO AWADELKARIM, C HALLIN, JL LINDSTROM and GS OEHRLEIN, 1991, "ELECTRICAL STUDIES ON ANNEALED D2 PLASMA-EXPOSED SILICON", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 138, (5), pp. 1456-1460
  • OO AWADELKARIM, SA SULIMAN, B MONEMAR, JL LINDSTROM, Yang Zhang and JW CORBETT, 1990, "DEFECTS STATES IN CARBON AND OXYGEN IMPLANTED P-TYPE SILICON", JOURNAL OF APPLIED PHYSICS, 67, (1), pp. 270-275
  • WM CHEN, OO AWADELKARIM, H WEMAN and B MONEMAR, 1990, "INTENSITY OF EXCITON LUMINESCENCE IN SILICON IN A WEAK MAGNETIC-FIELD", PHYSICAL REVIEW B, 42, (8), pp. 5120-5125
  • WM CHEN, OO AWADELKARIM, B MONEMAR, JL LINDSTROM and GS OEHRLEIN, 1990, "MICROSCOPIC IDENTIFICATION AND ELECTRONIC-STRUCTURE OF A DI-HYDROGEN VACANCY COMPLEX IN SILICON BY OPTICAL-DETECTION OF MAGNETIC-RESONANCE", PHYSICAL REVIEW LETTERS, 64, (25), pp. 3042-3045
  • OO AWADELKARIM, A HENRY, B MONEMAR and JL LINDSTROM, 1990, "THE ROLE OF GROUP-V IMPURITIES IN DEFECT FORMATION IN IRRADIATED SILICON", PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 120, (2), pp. 539-546
  • OO AWADELKARIM and B MONEMAR, 1989, "DEFECT STATES IN 2.0-MEV ELECTRON-IRRADIATED PHOSPHORUS-DOPED SILICON", JOURNAL OF APPLIED PHYSICS, 65, (12), pp. 4779-4788
  • A HENRY, OO AWADELKARIM, JL LINDSTROM and GS OEHRLEIN, 1989, "EFFECTS OF DEUTERIUM PLASMA TREATMENTS ON THE ELECTRICAL-PROPERTIES OF BORON-DOPED SILICON", MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 4, (1-4), pp. 147-151
  • H WEMAN, A HENRY, T BEGUM, B MONEMAR, OO AWADELKARIM and JL LINDSTROM, 1989, "ELECTRICAL AND OPTICAL-PROPERTIES OF GOLD-DOPED N-TYPE SILICON", JOURNAL OF APPLIED PHYSICS, 65, (1), pp. 137-145
  • A HENRY, OO AWADELKARIM, JL LINDSTROM and GS OEHRLEIN, 1989, "ELECTRICAL STUDIES ON PLASMA AND REACTIVE-ION-ETCHED SILICON", JOURNAL OF APPLIED PHYSICS, 66, (11), pp. 5388-5393
  • NA SALIH, OO AWADELKARIM, AH OSMAN and GM ISKANDER, 1989, "ESR STUDY OF X-IRRADIATED, 1,4-BENZO[B]THIAZINE (2) SINGLE-CRYSTALS", CHEMICA SCRIPTA, 29, (2), pp. 181-184
  • OO AWADELKARIM, SA SULIMAN and B MONEMAR, 1989, "ON THE 0.34 EV HOLE TRAP IN IRRADIATED BORON-DOPED SILICON", RADIATION EFFECTS AND DEFECTS IN SOLIDS, 112, (1-2), pp. 273-280
  • OO AWADELKARIM and B MONEMAR, 1988, "A STUDY OF IRON-RELATED CENTERS IN HEAVILY BORON-DOPED SILICON BY DEEP-LEVEL TRANSIENT SPECTROSCOPY", JOURNAL OF APPLIED PHYSICS, 64, (11), pp. 6306-6310
  • OO AWADELKARIM, 1988, "DIVACANCIES PRODUCTION IN IRRADIATED N-TYPE SILICON", PHYSICA B & C, 150, (3), pp. 312-318
  • Osama O Awadelkarim, O CLAESSON and A LUND, 1988, "FREE-RADICALS IN X-IRRADIATED ETHYLENE-GLYCOL CRYSTALS", ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, 43, (7), pp. 633-637
  • OO AWADELKARIM and B MONEMAR, 1988, "RADIATION-INDUCED DEFECT STATES IN LOW TO MODERATELY BORON-DOPED SILICON", JOURNAL OF APPLIED PHYSICS, 64, (11), pp. 6301-6305

Conference Proceedings

  • Ibrahim H. Khawaji, Osama O Awadelkarim and Akhlesh Lakhtakia, 2016, "Studies of Parylene C Microfibrous Thin Films Electrical Properties", SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 14, 75, (5), pp. 235-243
  • Samia A Suliman, Osama O Awadelkarim, J. Hao and M. Rioux, 2014, "High-Temperature Reverse-Bias Stressing of Thin Gate Oxides in Power Transistors", SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 12, 64, (8), pp. 45-52
  • Jifa Hao, Mark Rioux and Osama O Awadelkarim, 2011, "Observation of Negative Bias Temperature Instabilities in Parasitic P-Channel MOSFETs Occurring During High-Temperature Reverse-Bias Stressing of Trench-Gated N-Channel MOSFETs", 2011 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT (IRW), pp. 129-132
  • Fan Zhang, Jian Xu, Ting Zhu, Karthik Sarpatwari, Osama O Awadelkarim and S Ashok, 2007, "Investigating Charge Carrier Mobilities in Nanocrystal-Polymer Hybrid Photovoltaic Devices", 2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5, pp. 1991-1992
  • CT Wu, RS Ridley, G Dolny, T Grebs, C Knoedler, Samia A Suliman, B Venkataraman, Osama O Awadelkarim and Jerzy Ruzyllo, 2002, "Growth and reliability of thick gate oxide in U-trench for power MOSFET's", PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, pp. 149-152
  • G Dolny, N Gollagunta, Samia A Suliman, L Trabzon, Mark W Horn, OO Awadelkarim, SJ Fonash, CM Knoedler, J Hao, R Ridley, C Kocon, T Grebs and J Zeng, 2001, "Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETS using the charge-pumping technique", ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, pp. 431-434
  • L Trabzon and OO Awadelkarim, 2001, "The degradation of MOSFETs induced by the via etching of interlayer low-k polymers", ICM 2001: 13TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, pp. 103-106
  • SA Suliman, N Gallogunta, L Trabzon, J Hao, G Dolny, R Ridley, T Grebs, J Benjamin, C Kocon, J Zeng, CM Knoedler, Mark W Horn, OO Awadelkarim, SJ Fonash and Jerzy Ruzyllo, 2001, "The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs", 39TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2001, pp. 308-314
  • YZ Wang and OO Awadelkarim, 1998, "Correlation of performance and hot carrier stress reliability of polycrystalline silicon thin film transistors with substrates and substrate coating", FLAT-PANEL DISPLAY MATERIALS-1998, 508, pp. 91-96
  • R Kingi, YZ Wang, Stephen J Fonash, Osama O Awadelkarim and YM Li, 1997, "Approaches to modifying solid phase crystallization kinetics for a-Si films", FLAT PANEL DISPLAY MATERIALS II, 424, pp. 249-254
  • R Kingi, YZ Wang, SJ Fonash, Osama O Awadelkarim, J Mehlhaff and H Hovagimian, 1997, "Comparison between rapid thermal and furnace annealing for a-Si solid phase crystallization", FLAT PANEL DISPLAY MATERIALS II, 424, pp. 237-241
  • SJ Fonash, Osama O Awadelkarim, JL Crowley, TN Jackson, A Kahn, JC Sturm and S Wagner, 1997, "Device technology for lightweight panoramic displays", COCKPIT DISPLAYS IV: FLAT PANEL DISPLAYS FOR DEFENSE APPLICATIONS, 3057, pp. 570-580
  • JL Crowley, OO Awadelkarim, SJ Fonash, TN Jackson, A Kahn, TM Peterson, JC Sturm and S Wagner, 1997, "Industry/university teaming for display research", COCKPIT DISPLAYS IV: FLAT PANEL DISPLAYS FOR DEFENSE APPLICATIONS, 3057, pp. 60-67
  • MG ElHassan, OO Awadelkarim and J Werking, 1997, "The role of metal-1 layout in plasma processing-induced damage", 1997 2ND INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, pp. 251-254
  • SJ Fonash, M Ozaita, M Okandan, OO Awadelkarim and YD Chan, 1996, "A new methodology for monitoring and comparing edge exposure and plasma charging current damage from plasma processing", 1996 1ST INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, pp. 84-86
  • YZ Wang, R Kingi, OO Awadelkarim and SJ Fonash, 1996, "Effects of deposition parameters on crystallization of PECVD amorphous silicon films", POLYCRYSTALLINE THIN FILMS: STRUCTURE, TEXTURE, PROPERTIES, AND APPLICATIONS II, 403, pp. 373-378
  • A Salah, OO Awadelkarim, YD Chan and J Werking, 1996, "Inductive damage and the impact of rf power and magnetic field during MERIE processes", 1996 1ST INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, pp. 131-132
  • M Okandan, SJ Fonash, OO Awadelkarim and YD Chan, 1996, "Observation of electroluminescence and ''soft-breakdown'' effects in sub-0.5 mu m CMOS with ultrathin gate oxides", 1996 1ST INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, pp. 168-170
  • V Suntharalingam, SJ Fonash and OO Awadelkarim, 1995, "Device degradation in n- and p-channel polysilicon TFTs as a function of different electrical stress configurations", AMLCDS '95 - SECOND INTERNATIONAL WORKSHOP ON ACTIVE MATRIX LIQUID CRYSTAL DISPLAYS, WORKSHOP PROCEEDINGS, pp. 115-118
  • SJ FONASH, RA DITIZIO, T GU, PI MIKULAN, OO AWADELKARIM, RW COLLINS, JF REMBETSKI, KA REINHARDT and YD CHAN, 1992, "SURFACE CONDITIONING ISSUES RELATED TO PATTERNING AND ETCHING", CHEMICAL SURFACE PREPARATION, PASSIVATION AND CLEANING FOR SEMICONDUCTOR GROWTH AND PROCESSING, 259, pp. 55-66
  • OO AWADELKARIM, A HENRY, B MONEMAR and JL LINDSTROM, 1990, "DEFECT-FORMATION DEPENDENCE ON GROUP V-DOPANT ATOMS IN ELECTRON-IRRADIATED SILICON", IMPURITIES, DEFECTS AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES, 163, pp. 283-286
  • WM CHEN, OO AWADELKARIM, B MONEMAR, JL LINDSTROM and GS OEHRLEIN, 1990, "OPTICALLY DETECTED MAGNETIC-RESONANCE OF A HYDROGEN-RELATED COMPLEX DEFECT IN SILICON", IMPURITIES, DEFECTS AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES, 163, pp. 377-382

Manuscripts

  • Osama O Awadelkarim, , "Jefferson Science Fellow promotes science and technology exchanges with Africa"

Other

  • K. Sarpatwari, Osama O Awadelkarim, M. W. Allen, S. M. Durbin and Suzanne E Mohney, 2009, "Extracting the Richardson constant: IrOx/n-ZnO Schottky diodes (vol 94, 242110, 2009)", APPLIED PHYSICS LETTERS, 95, (5)
  • YZ Wang, OO Awadelkarim, JG Couillard and DG Ast, 1998, "The effect of substrates on the performance and hot-carrier reliability of n-channel thin film transistors", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 13, (5), pp. 532-535
  • YZ Wang and OO Awadelkarim, 1998, "The effects of glass-substrate's surface-treatment on the characteristics of N-channel polycrystalline silicon thin film transistors", JOURNAL OF ELECTRONIC MATERIALS, 27, (11), pp. L77-L80
  • WM CHEN, OO AWADELKARIM, H WEMAN and B MONEMAR, 1989, "OPTICALLY DETECTED MAGNETIC-RESONANCE OF A THERMALLY INDUCED DEEP CENTER IN ELECTRON-IRRADIATED SILICON", PHYSICAL REVIEW B, 40, (14), pp. 10013-10016
  • OO AWADELKARIM, 1988, "PHYSICS RESEARCH IN THE DEVELOPING-COUNTRIES - DEPARTMENT OF PHYSICS, UNIVERSITY-OF-KHARTOUM, SUDAN", PHYSICA SCRIPTA, T23, pp. 328-329
  • OO AWADELKARIM and B MONEMAR, 1988, "ALTERNATING DONOR-LIKE-ACCEPTOR-LIKE CONFIGURATIONALLY BISTABLE DEFECT IN IRRADIATED PHOSPHORUS-DOPED SILICON", PHYSICAL REVIEW B, 38, (14), pp. 10116-10119

Research Projects

  • September 2016 - February 2021, "The Nanotechnology Applications and Career Knowledge (NACK) Support Center," (Sponsor: National Science Foundation).
  • September 2018 - August 2021, "Collaborative Research: Louis Stokes Regional Center of Excellence: Broadening Participation of Underrepresented Students in STEM Education Using Nanotechnology," (Sponsor: National Science Foundation).
  • May 2017 - April 2020, "Nanotechnology Professional Development Partnership: A Web Based, Live-Streaming Approach for Optimizing Impact, Effectiveness, and Cost," (Sponsor: National Science Foundation).

Honors and Awards

  • Fellowship of the International Seminars in Physics and Chemistry (SWEDEN), July 1984 - May 1986
  • • UNESCO Chair on “Building Innovation and Manufacturing Capacities through Advanced Technology Education” at the Pennsylvania State University, UNESCO, August 2018
  • • Jefferson Science Fellow, The United States Department of State, July 2006

Service

Service to Penn State:

  • Administrative Support Work, Director, • Director, the Center for Nanotechnology Education and Utilization (CNEU) & the NSF Nanotechnology Applications and Career Knowledge (NACK) Network, the Pennsylvania State University., January 2015

Service to External Organizations:

  • Service to Public and Private Organizations, Other, Vice President, • Vice President of the International Commission for Development of UNESCO’s Encyclopedia Of Life Support Systems (UNESCO/EOLSS) Theme on Nanoscience and Nanotechnologies, (http://www.eolss.net), UNESCO, September 2009
  • Service to Governmental Agencies, Advisor, • Senior Science and Technology Advisor, U. S. Department of State, since 2006., September 2006
 


 

About

The Penn State Department of Engineering Science and Mechanics (ESM) is an internationally distinguished department that is recognized for its globally competitive excellence in engineering and scientific accomplishments, research, and educational leadership.

Our Engineering Science program is the official undergraduate honors program of the College of Engineering, attracting the University’s brightest engineering students. We also offer graduate degrees in ESM, engineering mechanics, engineering at the nano-scale, and an integrated undergraduate/graduate program.

Department of Engineering Science and Mechanics

212 Earth and Engineering Sciences Building

The Pennsylvania State University

University Park, PA 16802

Phone: 814-865-4523