Advanced transistor technology on silicon

Abstract: Wide bandgap materials and devices are desired for high speed and high power wireless communication applications. For such applications, GaN transistors are attractive candidates due to their high electron mobility and high breakdown features. They can be grown on various substrates including SiC and Si. Due to the low cost and CMOS compatibility, GaN-on-Si technology seems to be more attractive. However, the GaN-on-Si technology is still far behind the GaN-on-SiC counterpart. I will present the advancement of GaN-on-Si technology that our group has made contribution to.  

In addition, I will present some of our results on advancing the thin film transistor technology using TiO2 materials.

Biography: Dr. Yuping Zeng is currently an assistant professor at University of Delaware. She worked as a postdoctor under Prof. Chenming Hu and Ali Javey in University of California at Berkeley. She has been working on various projects on III-V compound semiconductor electron devices, such as InAs Tunneling Field Effect Transistors (TFETs), Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), Fin Field Effect Transistors (FinFETs). She received her PhD degree in Swiss Federal Institute of Technology in 2011. During her PhD study, she worked on optimizations of design and fabrication process of high speed InP/GaAsSb double heterojunction bipolar transistors (DHBTs) under Prof. Colombo Bolognesi. She obtained her Master degree in National University of Singapore where her main research was on nanoscale material process and characterizations. She is one of the 20 gift-young students who were selected to Jilin University at the age of 15 in 1994 for a gift-young university program in China and obtained her Bachelor’s degree when she was less than 19. Several facets of her research activity are reflected in 36 journal papers and 19 international conference papers. Dr. Zeng is a recipient of the 2009 Chinese Government Award for Outstanding Self-financed Students Abroad. Her research interests are continued on advanced devices and systems for low power applications and high performance applications by innovations in device design, material design and fabrication technology.