Growing Si Nanowires
Growing Si Nanowires from Nanochannel Templates at Place of Use—“Grow-in-Place” Technology
80nm SiNW on Glass
150nm SiNW on Glass
NW growth by extrusion approach
Self-positioned Nanowires offer easy subsequent fabrication.
As grown, NW’s are positioned, oriented, and ready for subsequent processing into sensor devices, transistors, field emission tips.
New Transistor Structure
Proposed, demonstrated, and now further developing the new AMOSFET transistor concept.
This new device concept shows excellent transistor characteristics (Applied Phys. Lett., in press)
Mercury Nanowire Sensors
Sensors exhibit a very reproducible
response to ionic and elemental Hg
SEM image of 100nm wide
Au nanowire Hg sensors.
Due to high surface to volume ratio of nano-scale, devices are more sensitive than thin film versions.
Fonash Group 2007
