Home :. People :. Directory

Suliman, Samia A.

Suliman, Samia A.

Assistant Professor

Office phone: (814) 863-3574
Office address: 407B Earth and Engineering Sciences Building
E-mail: sas178@psu.edu

Educational Background

  • Ph.D. (Honors), Engineering Science, Penn State University, 2002
  • M.Eng., Electrical Engineering, Southern Illinois University, 1995
  • M.Sc., Solid State Physics, Khartoum University, 1985
  • B.S., Physics, Imperial CollegeLondon University, 1981

Years of Service with Penn State (10 years)

  • June 2004 – Present Assistant Professor
  • Jan 2002 – May 2004 Instructor

Recent Principal Publications

  • Samia A. Suliman, Karthik Sarpatwari, Osama Osman Awadelkarim, and Lucas Passmore (2007) “Analysis of Current-Voltage-Temperature Characteristics in SiC Schottky Diodes Using Threshold-Accepting Simulated-Annealing Techniques,,” Solid State Elecronics, 51, pp. 644–649.
  • Lucas Passmore, Karthik Sarpatwari, Samia A. Suliman, and Osama Osman Awadelkarim (May 2006) “Fowler-Nordheim and Hot Carrier Reliabilities of U-Shaped Trench-Gated Transistors Studied by Three Terminal Charge Pumping,” Thin Solid Films, 504(1–2), pp. 302–306.
  • Lucas Passmore, Karthik Sarpatwari, Samia A. Suliman, and Osama Osman Awadelkarim (Sept 2005) “Modified three-terminal charge-pumping technique applied to vertical transistor structures,” Journal of Vacuum Science and Technology, 5(B 23), pp. 2189–2193.
  • Samia A. Suliman, Osama Osman Awadelkarim, Rodney Ridley, and Gary Dolny (Apr 2004) “Gate-oxide grown on the sidewalls and base of U-shaped Si trench: Effects of the oxide and oxide /Si interface condition on the properties of vertical MOS devices,” Microelectronics Engineering, 72(1–4), pp. 247–252.
  • Samia A. Suliman, Rodney Ridley, Gary Dolny, Osama Osman Awadelkarim, and Stephen J. Fonash (2003) “Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitor: The impact of polycrystalline Si doping and oxide composition,” Solid State Electronics, 47, pp. 899–905.
  • Samia A. Suliman, Osama Osman Awadelkarim, and Stephen J. Fonash (2002) “Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench,” Solid State Electronics, 46, pp. 837–845.
  • Samia A. Suliman, Osama Osman Awadelkarim, and Stephen J. Fonash (2001) “The effects of channel boron-doping on the performance and reliability of N-channel trench UMOSFETs,” Solid State Electronics, 45, pp. 655–661.

Consulting, Patents, and Scientific and Professional Society Memberships

  • ASEE, Member (2002 – Present)
  • IEEE, Member (2002 – Present)
  • NSBE, Member (2002 – Present)
  • SWE, Member (2002 – Present)
  • Royal College of Science (British), Associate member (1981 – Present)

Honors and Awards

  • Weiss Graduate Fellow, Weiss Family-Penn State (1999)
  • Associate: British Royal Collage of Science, Royal College of Science (Aug 1981)

Recent Institutional and Professional Service

  • Faculty Advisor, NSBE-Penn State (2002 – Present)
  • Panelist, NSF-GRFP (2002 – Present)
  • Faculty Advisor, SWE (June 2006 – June 2006)

Login to Edit