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Lenahan, Patrick M.

Lenahan, Patrick M.

Distinguished Professor

Office phone: (814) 863-4630
Office address: 101 Earth and Engineering Sciences Building
E-mail: pmlesm@engr.psu.edu
Homepage: http://www4.esm.psu.edu/centers/pm_lenahan/semiconductor.htm

Educational Background

  • Ph.D., Materials Science, University of Illinois, Champaign-Urbana, Illinois, 1979
  • B.S., Physics, University of Notre Dame, Notre Dame, Indiana, 1971

Years of Service with Penn State (27 years)

  • Jan 2007 – Present Distinguished Professor of Engineerring Science and Mechanics
  • June 1989 – Dec 2006 Professor of Engineering Science and Mechanics
  • Jan 1985 – May 1989 Associate Professor of Engineering Science and Mechanics

Other Related Experience — Teaching, Industrial, Etc.

  • Jan 2000 – June 2004 Associate Editor, Journal of Electronic Materials, IEEE, TMS
  • May 2002 – June 2002 Visiting Professor, Department of Electrical Engineering and Computer Science, Nihon University, Tokyo, Japan
  • Feb 1980 – Jan 1985 Member of the Technical Staff, Electronic and Organic Materials, Sandia National Laboratories, Albuquerque, New Mexico
  • July 1979 – Jan 1980 Post-Doctoral Fellow, Department of Electrical Engineering and Computer Science, Princeton University, Princeton, New Jersey

Recent Principal Publications

  • J. T. Ryan, Patrick M. Lenahan, G. Bersuker, and J. Robertson (Mar 2008) “Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based metal-oxide-silicon field-effect transistors,” Applied Physics Letters, 92, pp. art.no.123506.
  • J. P. Campbell, Patrick M. Lenahan, A. T. Krishnan, and S. Krishnan (Feb 2008) “Identification of the atomic scale defects involved in the negative bias temperature instability in plasma nitrided p-channel metal-oxide -silicon field effect transistors,” Journal of Applied Physics, 103(4), pp. art. no. 044505.
  • J. P. Campbell, Patrick M. Lenahan, A. T. Krishnan, C. J. Cochrane, A. T. Krishnan, and S. Krishnan (Dec 2007) “Atomic scale defects involved in the negative bias temperature instability ( This was an invited paper),” IEEE Transactions on Device and Materials Reliability, 7(4), pp. 540–557.
  • J. P. Campbell, Patrick M. Lenahan, A. T. Krishnan, and S. Krishnan (Sept 2007) “Identification of atomic scale defects structure involved in the negative bias temperature instability in plasma nitrided devices,” Applied Physics Letters, 91(13), pp. art. num. 133507.
  • Patrick M. Lenahan (June 2007) “Deep Level Defects Involved in MOS Device Instabilities (This was an invited paper),” Microelectronics Reliability, 47(6), pp. 890–898.
  • C. J. Cochrane, Patrick M. Lenahan, and A. J. Lelis (Mar 2007) “Deep level defects which limit current gain in 4H SiC bipolar junction transistors,” Applied Physics Letters, 90(12), pp. art. no. 123501.
  • C. J. Cochrane, Patrick M. Lenahan, J. P. Campbell, G. Bersuker, and A. Neugroshel (Mar 2007) “Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination,” Applied Physics Letters, 90(12), pp. art. no. 123502.
  • J. T. Ryan, Patrick M. Lenahan, and G. Bersuker (2007) “Electron Spin Resonance Observations of Oxygen Deficient Silicon Atoms in the Interfacial Layer of Hafnim Oxide Based Metal- Oxide-Silicon Structures,” Applied Physics Letters, 90(17), pp. art. no. 173513.
  • M. S. Dautrich, Patrick M. Lenahan, and A. J. Lelis (Nov 2006) “Identification of trapping defects in 4H silicon carbide metal-oxide-semiconductor field effect transistors by electrically detected magnetic resonance,” Applied Physics Letters, 89(22), pp. art. no. 223502.
  • G. Bersuker, C. S. Park, J. Barnett, J. T. Ryan, C. J. Cochrane, Patrick M. Lenahan, and others . (Nov 2006) “The effect of interfacial layer properties on the performance of HF based gate stack devices,” Journal of Applied Physics, 100(9), pp. art. no. 094108.
  • J. P. Campbell, Patrick M. Lenahan, A. T. Krishnan, and S. Krishnan (June 2006) “Observations of NBTI - induced atomic scale defects,” IEEE Transactions on Device and Materials Reliability, 6(2), pp. 117–122.
  • J. P. Campbell, Patrick M. Lenahan, A. T. Krishnan, and S. Krishnan (Nov 2005) “Direct observation of the structure of defect centers observed in the negative bias temperature instability,” Applied Physics Letters, 87(20), pp. art. no. 204106.

Consulting, Patents, and Scientific and Professional Society Memberships

  • Electron Paramagnetic Resonance Society, member (1994 – Present)
  • Institue of Electrical and Electronics Engineers, member (1993 – Present)
  • Materials Research Society, member (1988 – Present)

Honors and Awards

  • University Distinguished Professor, PSU (Dec 2006)
  • Outstanding Research Award, Penn State Engineering Society (May 1989)

Recent Institutional and Professional Service

  • General Program Chairman, International Integrated Reliability Workshop, IEEE (Oct 2007 – Present)
  • Organizing Committee, Electron Paramagnetic Resonance Symposium, Rocky Mountain Conference on Analytical Chemistry (2005 – Present)
  • Technical Program Committee, Semiconductor Insulator Interface Specialists Conference, IEEE (2005 – Present)
  • reviewer for numerous technical and scientific journals, AIP, IEEE, and others (2003 – Present)
  • Technical Program Committee, Electronic Materials Conference, TMS (2003 – Present)
  • service on numerous department committees, Dept ESM (2003 – Present)
  • Technical Program Committee, International Integrated Reliability Workshop, IEEE (2003 – Present)
  • Technical Program Chairman, International Integrated Reliability Workshop, IEEE (Aug 2006 – Oct 2007)
  • Technical Program Committee , International Electron Devices Meeeting, IEEE (2006 – 2006)
  • Technical Program Committee, Nuclear, Space Radiation Effects Conference, IEEE (2005 – 2005)

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