S. Ashok to present papers at International Conference on Solid State Devices and Materials
Category: Faculty and Staff News
Posted by: sxc1
on Aug 5, 2005
Dr. S. Ashok, Professor of Engineering Science and Mechanics, will present two papers at the International Conference on Solid State Devices and Materials (SSDM 205) in Kobe, Japan, September 13-15, 2005. The presentation titles with co-author names follow.
A. Vengurlekar (Penn State) and S. Ashok, "Dopant Activation Enhancement in Silicon by Hydrogen Treatment."
A. Vengurlekar (Penn State) S. Ashok, E. Ntsoenzok (CNRS, Orleans, France) and N.D. Theodore (Freescale Semiconductor, Mesa, AZ). "Effect of Hydrogen on Helium Implant -induced Nanocavities"
A. Vengurlekar (Penn State) and S. Ashok, "Dopant Activation Enhancement in Silicon by Hydrogen Treatment."
A. Vengurlekar (Penn State) S. Ashok, E. Ntsoenzok (CNRS, Orleans, France) and N.D. Theodore (Freescale Semiconductor, Mesa, AZ). "Effect of Hydrogen on Helium Implant -induced Nanocavities"


RSS Feed