Dr. S. Ashok, Professor of Engineering Science and Mechanics, will present two papers at the International Conference on Solid State Devices and Materials (SSDM 205) in Kobe, Japan, September 13-15, 2005. The presentation titles with co-author names follow.

A. Vengurlekar (Penn State) and S. Ashok, "Dopant Activation Enhancement in Silicon by Hydrogen Treatment."

A. Vengurlekar (Penn State) S. Ashok, E. Ntsoenzok (CNRS, Orleans, France) and N.D. Theodore (Freescale Semiconductor, Mesa, AZ). "Effect of Hydrogen on Helium Implant -induced Nanocavities"