P.M. Lenahan will present an invited talk titled Point Defects Involved in MOS Reliability Problems at the Workshop on Modeling of Reliability Issues of the International Workshop on Computational Electronics on May 25-27, 2006, in Vienna Austria. This meeting has been organized by the Christian Doppler Laboratory of the Technical University of Vienna. His talk will deal with the structure and electronic properties of trapping centers involved in fundamental physical limits to the stability of the most important devices in present day microelectronics, metal oxide silicon field effect transistors (MOSFETs).