Samia A. Suliman, Assistant Professor of Engineering Science and Mechanics, will present two papers at The 6th International Workshop on Junction Technology, to be held May 15-16, 2006, in Shanghai, China.

Session: Heterojunction Device and Contact
Paper Title: Current-voltage characteristics and charge-carrier traps in n-type 4H-SiC Schottky structures (Invited); co-authored with K. Sarpatwari, L. J. Passmore, S. A. Suliman, and O. O. Awadelkarim

Session: Si-Based Novel Structures and Devices
Paper Title: Properties of Si/SiO2 interfaces in vertical trench MOSFETs