Publications
  1. E. M. Lysczek and S. E. Mohney, "Selective Deposition of Ohmic Contacts to p-InGaAs by Electroless Deposition," Journal of The Electrochemical Society 104, H699 (2008).

  2. M. A. Miller and S. E. Mohney, "High and Low Temperature Behavior of Ohmic Contacts to AlGaN/GaN Heterostructures with a Thin GaN Cap," Journal of Vacuum Science and Technology B 26, 1883 (2008).

  3. Tsung-ta Ho, Yanfeng Wang, Sarah Eichfeld, Kok-Keong Lew, Banghzi Liu, Suzanne E. Mohney, Joan M. Redwing and Theresa S. Mayer, "In Situ Axially Doped n-Channel Silicon Nanowire Field Effect Transistors," Nano Letters 8, 4359 (2008).

  4. Chunfeng Zhang, Fan Zhang, Ting Zhu, An Cheng, Jian Xu, Qi Zhang, Suzanne E. Mohney, Ron H. Henderson, and Y. Andrew Wang"Two-Photon-Pumped Lasing from Colloidal Nanocrystal Quantum Dots," Optics Letters 33, 2437 (2008).

  5. M. A. Miller, S. K. Lin, and S. E. Mohney, "V/Al/V/Ag Contacts to n-GaN and n-AlGaN," Journal of Applied Physics 104, Article 064508 (2008).

  6. N. S. Dellas, K. Meinert, Jr. and S. E. Mohney, "Laser-Enhanced Electroless Plating of Silver Seed Layers for Selective Electroless Copper Deposition," Journal of Laser Applications 20, 218 (2008).

  7. S. M. Woodruff, N. S. Dellas, B. Z. Liu, S. M. Eichfeld, T. S. Mayer, J. M. Redwing, and S. E. Mohney, "Nickel and Nickel Silicide Schottky Barrier Contacts to n-Type Silicon Nanowires," Journal of Vacuum Science and Technology B 26, 1592 (2008).

  8. B. Z. Liu, Y. F. Wang, T. T. Ho, K. K. Lew, S. M. Eichfeld, J. M. Redwing, T. S. Mayer, and S. E. Mohney, "Oxidation of Silicon Nanowire for Top-Gated Field Effect Transistors," Journal of Vacuum Science and Technology A 26, 370 (2008).

  9. M. A. Miller, B. H. Koo, K. H. A. Bogart, and S. E. Mohney, "Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-AlGaN," Journal of Electronic Materials 37, 564 (2008).

  10. T. Zhu, K. Shanmugasundaram, S. C. Price, J. Ruzyllo, F. Zhang, J. Xu, S. E. Mohney, Q. Zhang, and A. Y. Wang, "Mist Fabrication of Light Emitting Diodes with Colloidal Nanocrystal Quantum Dots," Applied Physics Letters 3, 92 (2008).

  11. Z. N. Tan, F. Zhang, T. Zhu, J. Xu, A. Y. Wang, D. Dixon, L. S. Li, Q. Zhang, S. E. Mohney, J. Ruzyllo, "Bright and Color-Saturated Emission from Blue Light-Emitting Diodes Based on Solution-Processed Nanocrystal Quantum Dots," Nano Letters 7, 3803 (2007).

  12. C. M. Eichfeld, C. Wood, B. Liu, S. M. Eichfeld, J. M. Redwing, and S. E. Mohney, "Selective Plating for Junction Delineation in Silicon Nanowires," Nano Letters 7, 2642 (2007).

  13. S. M. Eichfeld, T. T. Ho, C. M. Eichfeld, A. Cranmer, S. E. Mohney, T. S. Mayer, and J. M. Redwing, "Resistivity Measurements of Intentionally and Unintentionally Template-Grown Doped Silicon Nanowire Arrays," Nanotechnology 18, Article 315201 (2007).

  14. M. A. Miller and S. E. Mohney, "V/Al/V/Ag Ohmic Contacts to n-AlGaN/GaN Heterostructures with a Thin GaN Cap," Applied Physics Letters 91, Article 012103 (2007).

  15. Z. Xu, J. H. Edgar, D. C. Look, S. Baumann, R. J. Beiler, S. H. Wang, and S. E. Mohney, "The Effect of Si Doping on the Electrical Properties of B12As2 Thin Films on (0001) 6H-SiC," Journal of Applied Physics 101, Article 053710 (2007).

  16. B. Z. Liu, Y. F. Wang, S. Dilts, T. S. Mayer, and S. E. Mohney, "Silicidation of Silicon Nanowires by Platinum," Nano Letters 7, 818 (2007).

  17. Steven C. Price, Karthik Shanmugasundaram, Ting Zhu, Fan Zhang, Jian Xu, Suzanne Mohney, Q. Zhang, and J. Ruzyllo, "Formation of Ultra-Thin Quantum Dot Films by Mist Deposition," ECS Transactions 11, 89 (2007).

  18. Tsung-ta Ho, Yangfeng Wang, Bangzhi Liu, Sarah Eichfeld, K. K. Lew, Suzanne Mohney, Joan Redwing, and Theresa Mayer"Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth," 2007 International Semiconductor Device Research Symposium (2007) DOI:10.1109/ISDRS.2007.4422515.

  19. E. M. Lysczek, J. A. Robinson, and S. E. Mohney, "Ohmic Contacts to p-Type InAs," Materials Science and Engineering B 134, 44 (2006).

  20. M. A. Mayer, S. E. Mohney, A. Nikiforov, G. S. Cargill, and K. H. A. Bogart "Ohmic Contacts to Plasma-Etched n-AlGaN," Applied Physics Letters 89, Article 132114 (2006).

  21. D. Shir, B. Z. Liu, A. M. Mohammad, K. K. Lew, and S. E. Mohney, "Oxidation of Silicon Nanowires," Journal of Vacuum Science and Technoloy B 24, 1333 (2006).

  22. J. A. Robinson, S. E. Mohney, J. B. Boos, B. P. Tinkham, and B. R. Bennett, "Pd/Pt/Au ohmic contact for AlSb/InAsSb Heterostructures," Solid State Electronics 50, 429 (2006).

  23. S. H. Wang, E. M. Lyszcek, B. Z. Liu, J. A. Robinson, and S. E. Mohney, "Shallow and Thermally Stable Ohmic contacts to p-InGaSb," Journal of The Electrochemical Society 153, G479 (2006).

  24. J. A. Robinson and S. E. Mohney, "Solid-State Phase Formation between Pd Thin Films and GaSb," Journal of Electronic Materials 35, 48 (2006).

  25. A. V. Adedeji, A. C. Ahyi, J. R. Williams, M. J. Bozack, S. E. Mohney, B. Liu and J. D. Scofield, "Composite Ohmic Contacts to SiC," Materials Science Forum 527-529, 879 (2006).

  26. S. H. Wang, O. Arnold, C. M. Eichfeld, S. E. Mohney, A. V. Adedeji, and J. R. Williams "Tantalum-Ruthenium Diffusion Barriers for Contacts to SiC," Materials Science Forum 527-529, 883 (2006).

  27. S. E. Mohney, E. Lysczek, S. Wang, and J. Robinson"Ohmic Contacts to p-Type III-V Semiconductors for the Base of Heterojunction Bipolar Transistors," ECS Transactions 5, 47 (2006).

  28. Yanfeng Wang, Tsung-ta Ho, S. Dilts, Kok-Keong Lew, Bangzhi Liu, S. Mohney, J. Redwing, and T. Mayer"Inversion-mode Operation of Thermally-oxidized Modulation-doped Silicon Nanowire Field Effect Devices," Proc. IEEE Device Research Conference 175 (2006).

  29. Nicholas Dellas, Kenneth Meinert, Brock Golesich, and Suzanne Mohney "Development of Laser-Based Techniques for Rapid Prototyping of Printed Wiring Boards," Proc. International Congress on Applications of Lasers and Electro-Optics in LMP 18: Rapid Prototyping, Sintering and Powder Bed Technology 1801 (2006).

  30. S. H. Wang, E. M. Lysczek, Bangzhi Liu, S. E. Mohney, Z. Xu, R. Nagarajan and J. H. Edgar, "Cr/Pt Ohmic Contacts to B12As2" Applied Physics Letters 87, 042103 (2005).

  31. S. E. Mohney, Y. Wang, M. A. Cabassi, K. K. Lew, S. Dey, J. M. Redwing and T. S. Mayer, "Measuring the Specific Contact Resistance of Contacts to Semiconductor Nanowires," Solid State Electronics 49, 227 (2005).

  32. C. M. Eichfeld, M. A. Horsey, S. E. Mohney, A. V. Adedeji and J. S. Williams, "Ta-Ru-N Diffusion Barriers for High-Temperature Contacts to p-Type SiC," Thin Solid Films 485, 207 (2005).

  33. T. E. Bogart, S. Dey, S. E. Mohney and J. M. Redwing, "Diameter-Controlled Synthesis of Silicon Nanowires Using Nanoporous Alumina Membranes," Advanced Materials 17, 114 (2005).

  34. S. H. Wang, S. E. Mohney and J. A. Robinson, "Design of Thermally Gate Metallizations for AlGaAsSb/InAs HEMTs," Semiconductor Science and Technology 20, 755 (2005).

  35. E. D. Readinger, J. A. Robinson, S. E. Mohney and R. Therrien, "Thermal Stability of Metallizations on GaN/AlxGa1-xN/GaN Heterostructures," Semiconductor Science and Technology 20, 389 (2005).

  36. S. H. Wang, J. A. Robinson, S. E. Mohney and B. R. Bennett, "Shallow and Thermally Stable Pt/W/Au Ohmic Contacts to p-Type InGaSb," Journal of Vacuum Science and Technology A 23, 293 (2005).

  37. J. A. Robinson and S. E. Mohney, "A Low-Resistance, Thermally Stable Ohmic Contact to n-GaSb," Journal of Applied Physics 98, 033703 (2005).

  38. E. D. Readinger and S. E. Mohney, "Environmental Sensitivity of Au Diodes on n-AlGaN," Journal of Electronic Materials 34, 375 (2005).

  39. Gary L. Gray, Andrew J. Miller, Thomas J. Yurick, Jr. and Suzanne E. Mohney, "Educational Software for Materials Processing," Journal of Materials Education 26, 321 (2004).

  40. J. A. Robinson and S. E. Mohney, "Characterization of Sulfur Passivated n-GaSb using Transmission Electron Microscopy and the Influence of Passivation on Ohmic Contact Resistance," Journal of Applied Physics 96, 2684 (2004).

  41. B. A. Hull, S. E. Mohney, U. Chowdhury and R. D. Dupuis, "Compositional Shift in AlxGa1-xN Beneath Annealed Metal Contacts," Journal of Vacuum Science and Technology B 22, 654 (2004).

  42. S. H. Wang, S. E. Mohney, J. A. Robinson and B. R. Bennett, "Sulfur Passivation for Shallow Ohmic Contacts to p-InGaSb," Applied Physics Letters 85, 3471 (2004).

  43. Sarah M. Dilts, Ahmad Mohammad, Kok-Keong Lew, Joan M. Redwing and Suzanne E. Mohney, "Fabrication and Electrical Characterization of Silicon Nanowire Arrays," Mat. Res. Soc. Symp. Proc. 832, F9.10 (2004).

  44. J. H. Wang, S. E. Mohney, S. H. Wang, U. Chowdhury and R. D. Dupuis, "Vanadium-Based Ohmic Contacts to n-Type Al0.6Ga0.4N," Journal of Electronic Materials 33, 418 (2004).

  45. B. A. Hull, S. E. Mohney and Z. K. Liu, "Thermodynamic Modeling of the Ni-Al-Ga-N System," Journal of Materials Research 19, 1742 (2004).

  46. B. A. Hull, S. E. Mohney, U. Chowdhury and R. D. Dupuis, "Ohmic Contacts to p-Type Al0.45Ga0.55N," Journal of Applied Physics 96, 7325 (2004).

  47. J. A. Robinson and S. E. Mohney, "An Improved In-based Ohmic Contact to n-GaSb," Solid-State Electronics 48, 1667 (2004).

  48. R. Magno, J. B. Boos, P. M. Campbell, B. R. Bennett, E. R. Glaser, B. P. Tinkham, M. G. Ancona, K. D. Hobart, N. A. Papanicolaou, K. Ikossi, W. Kruppa, D. Park, B. V. Shanabrook, J. Mittereder, W. Chang, R. Bass, S. E. Mohney, S. Wang, J. Robinson, R. Tsai, M. Barsky, M. D. Lange, and A. Gutierrez, "Low-Power, High-Speed Sb-based HEMTs and HBTs," in State of the Art Program on Compound Semiconductors CL and Narrow Bandgap Optoelectronic Materials and Devices II, ed. D. N. Buckley, W. K. Chan, P. C. Chang, K. Shiojima and P D. Fox, The Electrochemical Society Symposium Proceedings 2004-02, 191 (2004).

  49. Ahmad M. Mohammad, Soham Dey, K.-K. Lew, J. M. Redwing and S. E. Mohney, "Fabrication of Cobalt Silicide Nanowire Contacts to Silicon Nanowires," Journal of the Electrochemical Society 150, G577 (2003).

  50. W. E. Liu and S. E. Mohney, "Condensed Phase Equilibria in Transition Metal-In-Sb Systems and Predictions for Thermally Stable Contacts to InSb," Materials Science and Engineering B103, 189 (2003).

  51. Gaurav Sharma, C. M. Eichfeld, and S. E. Mohney, "Intermetallic Growth Between Lead Free Solders and Palladium," Journal of Electronic Materials 32, 1209 (2003).

  52. W. E. Liu and S. E. Mohney, "Condensed Phase Equilibria in Transition Metal-Ga-Sb Systems and Predictions for Thermally Stable Contacts to GaSb," Journal of Electronic Materials 32, 1090 (2003).

  53. S. H. Wang, S. E. Mohney, B. A. Hull and B. R. Bennett, "Design of a Shallow, Thermally Stable Ohmic Contact to p-Type InGaSb," Journal of Vacuum Science and Technology 21, 633 (2003).

  54. E. M. Lysczek, S. E. Mohney and T. N. Wittberg, "Shallow Ohmic Contacts to p-Type InAs," Electronics Letters 39, 1866 (2003).

  55. S. E. Mohney, A. J. Miller and G. L. Gray"Software for Teaching Materials Processing and Diffusion," JOM-e (2003): http://www.tms.org/pubs/journals/JOM/0312/Mohney/Mohney-0312.html.

  56. E. D. Readinger, S. E. Mohney, T. G. Pribicko, J. H. Wang, K. O. Schweitz, U. Chowdhury, M. M. Wong, R. D. Dupuis, M. Pophristic and S. P. Guo, "Ohmic Contacts to Al-rich n-AlGaN," Electronics Letters 38, 1230 (2002).

  57. S. H. Wang, S. E. Mohney, and R. Birkhahn, "Thermal and Environmental Aging of Au/Ni/p-GaN Contacts Annealed in Air," Journal of Applied Physics 91, 3711 (2002).

  58. K. O. Schweitz, P. K. Wang, S. E. Mohney, and D. Gotthold, "V/Al/Pt/Au Ohmic Contact to n-AlGaN/GaN Heterostructures with a Moderate Annealing Temperature," Applied Physics Letters 80, 1954 (2002).

  59. Brett A. Hull, Suzanne E. Mohney, Uttiya Chowdhury, Russell D. Dupuis, David Gotthold, Ronald Birkhahn, and Milan Pophristic, "Contacts to High Aluminum Fraction p-type Aluminum Gallium Nitride," (Materials Research Society Symposium Proceedings 743), L12.2.1 (2002).

  60. S. E. Mohney, B. A. Hull, J. Y. Lin, and J. Crofton, "Morphological Study of the Al-Ti Ohmic Contact to p-Type SiC," Solid-State Electronics 46, 689 (2002).

  61. J. Crofton, S. E. Mohney, J. R. Williams, and T. Isaacs-Smith, "Finding the Optimum Al-Ti Alloy Composition for Use as an Ohmic Contact to p-Type SiC," Solid-State Electronics 46, 109 (2002).

  62. E. D. Readinger, B. P. Luther, S. E. Mohney, and E. L. Piner, "Environmental Aging of Schottky Contacts to n-AlGaN," Journal of Applied Physics 89, 7983 (2001).

  63. K. O. Schweitz and S. E. Mohney, "Phase Equilibria in (Transition Metal)-Al-Ga-N Systems and Thermal Stability of Contacts to AlGaN," Journal of Electronic Materials 30, 175 (2001) and "Erratum," Journal of Electronic Materials 30, 445 (2001).

  64. J. Y. Lin, S. E. Mohney, M. Smalley, J. Crofton, J. R. Williams, and T. Isaacs-Smith, "Engineering the Al-Ti/p-SiC Ohmic Contact for Improved Performance," in Silicon Carbide: Materials, Processes, and Devices (Materials Research Society Symposium Proceedings 640, 2001), H7.3.1.

  65. T. J. Yurick, Jr., S. E. Mohney, and G. L. Gray, "Shape Memory Alloy Coils Optimized for Electrical Connectors," IEEE Transactions on Components, Packaging, and Manufacturing Technology 24, 389 (2001).

  66. K. O. Schweitz, T. G. Pribicko, S. E. Mohney, T. F. Isaacs-Smith, J. Williams, M. Pophristic, D. Gotthold, R. Birkhahn, and I. Ferguson, "The Influence of Contact Composition, Pretreatment, and Annealing Gas on the Ohmic Behavior of Ti/Al-Based Ohmic Contacts to n-Al0.4Ga0.6N," Materials Research Society Symposium Proceedings 680E, 2001), E6.2.1.

  67. F. D. Auret, S. A. Goodman, G. Myburg, S. E. Mohney, and J. M. DeLucca, "Processing-Induced Electron Traps in n-type GaN," Materials Science and Engineering B 82, 102 (2001).

  68. S. D. Wolter, J. M. DeLucca, S. E. Mohney, R. S. Kern, and C. P. Kuo, "An Investigation into the Early Stages of Oxide Growth on Gallium Nitride," Thin Solid Films 371, 153 (2000).

  69. B. A. Hull, S. E. Mohney, H. S. Venugopalan, and J. C. Ramer, "Influence of Oxygen on the Activation of p-Type GaN," Applied Physics Letters 76, 2271 (2000).

  70. Igor Kulisic, Gary L. Gray, Thomas J. Yurick, Jr., and Suzanne Mohney, "Performance of a Shape Memory Alloy Coil-Shaped Clamp for Enhanced Normal Force in Pin-and-Receptacle Electrical Connectors," IEEE Transactions on Components, Packaging, and Manufacturing Technology 23, 227 (2000).

  71. Joon Seop Kwak, S. E. Mohney, Je-Yi Lin, and R. S. Kern, "Low resistance Al/Ti/n-GaN Ohmic Contacts with Improved Surface Morphology and Thermal Stability," Semiconductor Science and Technology 15, 756 (2000).

  72. J. M. DeLucca, S. E. Mohney, F. D. Auret, and S. A. Goodman, "Pt Schottky Contacts to n-GaN Formed by Electrodeposition and Physical Vapor Deposition," Journal of Applied Physics 88, 2593 (2000).

  73. T. J. Yurick, Jr., S. E. Mohney, G. L. Gray, "Optimization of Shape Memory Alloys for Use in Electrical Connectors," Proceedings of the 46th IEEE Holm Conference on Electrical Contacts, 47 (2000).

  74. S. E. Mohney, "Ohmic Contacts to GaN and the Group III Nitride Semiconductor Alloys," in Properties, Processing, and Applications of Gallium Nitride and Related Compounds, ed. J. H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel, INSPEC, London, pp. 491 (1999).

  75. S. E. Mohney, "Schottky Barrier Contacts to GaN," in Properties, Processing, and Applications of Gallium Nitride and Related Compounds, ed. J. H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel, INSPEC, London, pp. 496 (1999).

  76. H. S. Venugopalan, S. E. Mohney, J. M. DeLucca, and R. J. Molnar, "Approaches to Designing Thermally Stable Schottky Contacts to n-GaN," Semiconductor Science and Technology 14, 757 (1999).

  77. S. D. Wolter, B. P. Luther, S. E. Mohney, R. F. Karlicek, Jr., and R. S. Kern, "Thermally Stable ZrN/Zr/n-GaN Ohmic Contacts," Electrochemical and Solid-State Letters 2, 151 (1999).

  78. E. D. Readinger, S. D. Wolter, D. L. Waltemyer, J. M. DeLucca, S. E. Mohney, B. I. Prenitzer, L. A. Giannuzzi, and R. J. Molnar, "Wet Thermal Oxidation of GaN," Journal of Electronic Materials 28, 257 (1999).

  79. Y. Ren, M. Micovic, W.Z. Cai, S. Mohney, S.M. Lord, D.L. Miller, and T.S. Mayer, "Effect of In Situ Annealing on Highly-Mismatched InGaAs on InP Grown Using Molecular Beam Epitaxy," Journal of Electronic Materials 28, 887 (1999).

  80. B. P. Luther, S. D. Wolter, and S. E. Mohney, "High Temperature Pt Schottky Diode Gas Sensors on n-Type GaN," Sensors and Actuators B 56, 164 (1999).

  81. H. S. Venugopalan and S. E. Mohney, "Thermally Stable Rhenium Schottky Barrier Contacts to n-GaN," Applied Physics Letters 73, 1242 (1998).

  82. B. P. Luther, S. E. Mohney, and T. N. Jackson, "Titanium and Titanium Nitride Contacts to n-type Gallium Nitride," Semiconductor Science and Technology 13, 1322 (1998).

  83. K. A. Whitmire and S. E. Mohney, "Phase Equilibria in the Semiconductor-rich Portions of the Pt-Ti-Ga-As and Pt-Ti-In-As Systems," Journal of Materials Science: Materials in Electronics 9, 357 (1998).

  84. I. F. Kulisic, G. L. Gray, and S. E. Mohney, "Shape Memory Alloy Coil-Shaped Clamp for Enhanced Normal Force in Electrical Connectors," Proceedings of the 44th IEEE Holm Conference on Electrical Contacts, 20 (1998).

  85. J. M. DeLucca, H. S. Venugopalan, S. E. Mohney, and R. F. Karlicek, Jr., "Ohmic Contacts Formed by Physical Vapor Deposition and Electrodeposition on p-GaN," Applied Physics Letters 73, 3402 (1998).

  86. H. S. Venugopalan, S. E. Mohney, J. M. DeLucca, B. P. Luther, and G. E. Bulman, "Morphology of Nickel and Nickel/Gold Contacts to Gallium Nitride," Journal of Vacuum Science and Technology A 16, 607 (1998).

  87. B. P. Luther, S. E. Mohney, J. M. DeLucca, and R. F. Karlicek, Jr., "Study of Specific Contact Resistance, Mechanical Integrity, and Thermal Stability of Ti/Al and Ta/Al Ohmic Contacts to n-Type GaN," Journal of Electronic Materials 27, 196 (1998).

  88. S. D. Wolter, S. E. Mohney, H. Venugopalan, A. E. Wickenden, and D. D. Koleski, "Kinetic Study of the Oxidation of Gallium Nitride in Dry Air," Journal of The Electrochemical Society 145, 629 (1998).

  89. T. N. Oder, J. R. Williams, M. J. Bozack, V. Iyer, S. E. Mohney, and J. Crofton "High Temperature Stability of Chromium Boride Ohmic Contacts to p-Type 6H-SiC," Journal of Electronic Materials 27, 324 (1998).

  90. H. S. Venugopalan and S. E. Mohney, "Thermally Stable Schottky Contacts to n-GaN," Wide-Bandgap Semiconductors for High Power, High Frequency, and High Temperature, ed. S. Denbaars, M.S. Shur, J. Palmour, M. Spencer (Materials Research Society Symposium Proceedings 512, 1998), 279.

  91. T. N. Oder, J. R. Williams, S. E. Mohney, and J. Crofton, "Refractory Metal Boride Ohmic Contacts to p-type 6H-SiC," Journal of Electronic Materials 27, 12 (1998).

  92. S. E. Mohney, "Condensed Phase Equilibria in the Metal-In-P Systems," Journal of Electronic Materials 27, 24 (1998).

  93. H. S. Venugopalan and S. E. Mohney, "Condensed Phase Equilibria in the Mo-Ga-N System at 800 °C," Zeitschrift für Metallkunde 89, 184 (1998).

  94. E. D. Luckowski, J. M. DeLucca, J. R. Williams, S. E. Mohney, M. J. Bozack, T. Isaacs-Smith, and J. Crofton, "Improved Ohmic Contacts to n-Type 4H and 6H-SiC using Nichrome," Journal of Electronic Materials 27, 330 (1998).

  95. W. R. Bitler and S. E. Mohney, "Interdiffusion in Metals," in The Era of Materials, ed. S. K. Majumdar, R. E. Tressler, and E. W. Miller, (The Pennsylvania Academy of Science, Easton, PA, 1998), 176.

  96. J. Crofton, L. Beyer, T. Hogue, R. R. Siergiej, S. Mani, J. B. Cassidy, T. N. Oder, J. R. Williams, E. D. Luckowski, T. Isaacs-Smith, V. R. Iyer, and S. E. Mohney, "High Temperature Ohmic Contacts to p-Type SiC," 4th International High Temperature Electronics Conference (IEEE, Piscataway, NJ, 1998), 84.

  97. S. E. Mohney, B. P. Luther, S. D. Wolter, T. N. Jackson, R. F. Karlicek, Jr., and R. S. Kern "TiN and ZrN Based Ohmic Contacts to n-GaN," 4th International High Temperature Electronics Conference (IEEE, Piscataway, NJ, 1998), 134.

  98. B. P. Luther, J. M. DeLucca, S. E. Mohney, and R. F. Karlicek, Jr., "Analysis of a Thin Interfacial AlN Layer in Ti/Al and Pd/Al Ohmic Contacts to n-GaN," Applied Physics Letters 71, 3859 (1997).

  99. S. E. Mohney, D. J. MacMahon, and K. L. Whitmire, "Condensed Phase Equilibria in the Cr-Ga-N System," Materials Science and Engineering B49, 152 (1997).

  100. J. Crofton, L. Beyer, J. R. Williams, E. D. Luckowski, S. E. Mohney, and J. M. DeLucca, "Aluminum-Titanium Ohmic Contacts to p-type SiC," Solid State Electronics 41, 1725 (1997).

  101. H. S. Venugopalan, S. E. Mohney, B. P. Luther, S. D. Wolter, and J. M. Redwing, "Interfacial Reactions between Nickel Thin Films and GaN," Journal of Applied Physics 82, 650 (1997).

  102. B. P. Luther, S. E. Mohney, T. N. Jackson, M. A. Khan, Q. Chen, and J. W. Wang, "Investigation of the Mechanism for Ohmic Contact Formation in Al and Ti/Al Contacts to n-type GaN," Applied Physics Letters 70, 57 (1997).

  103. S. D. Wolter, B. P. Luther, D. L. Waltemyer, C. Onneby, S. E. Mohney, and R. J. Molnar, "X-ray Photoelectron Spectroscopy and X-ray Diffraction Study of the Thermal Oxide on Gallium Nitride," Applied Physics Letters 70, 2156 (1997).

  104. Hagen Klauk, Steven L. Wright, Laura F. Palmateer, Suzanne E. Mohney, and Thomas N. Jackson, "Hydrogenated Amorphous SiGe Black Matrix Material for Active-Matrix Liquid-Crystal Displays," Journal of the Society for Information Display 5, 393 (1997).

  105. B. P. Luther, S. E. Mohney, T. N. Jackson, M. A. Khan, Q. Chen, and J. W. Wang, "Investigation of Aluminum and Titanium/Aluminum Contacts to n-Type Gallium Nitride," III-V Nitrides, ed. F. A. Ponce, T. D. Moustakas, I. Akasaki, and B. A. Monemar (Materials Research Society Symposium Proceedings 449, 1997), 1097.

  106. H. S. Venugopalan, S. E. Mohney, B. P. Luther, S. D. Wolter, J. M. Redwing, G. E. Bulman, "Phase Formation and Morphology in Nickel and Nickel/Gold Contacts to Gallium Nitride," Gallium Nitride and Related Materials II, ed. C.R. Abernathy, H. Amano, J.C. Zolper (Materials Research Society Symposium Proceedings 468, 1997), 431.

  107. S. D. Wolter, S. E. Mohney, H. Venugopalan, D. L. Waltemyer, B. P. Luther, "Growth and Characterization of Thermal Oxides on Gallium Nitride," Gallium Nitride and Related Materials II, ed. C.R. Abernathy, H. Amano, J.C. Zolper (Materials Research Society Symposium Proceedings 468, 1997), 495.

  108. S. E. Mohney, H. S. Venugopalan, and B. P. Luther, "Phase Equilibria in Transition Metal-Ga-N Systems: Experimental Determinations and Consequences for Electrical Contacts to GaN," High Temperature Materials Chemistry, ed. K. E. Spear (The Electrochemical Society Proceedings 97-39, 1997), 101.

  109. S. D. Wolter, B. P. Luther, D. L. Waltemyer, H. S. Venugopalan, and S. E. Mohney, "Oxidation of Gallium Nitride," High Temperature Materials Chemistry, ed. K. E. Spear (The Electrochemical Society Proceedings 97-39, 1997), 847.

  110. Y. A. Chang, F.-Y. Shiau, S.-L. Chen, and S. Mohney, "Thermodynamic Considerations in the Rationalization of Solid-State Amorphization between Metals and III-V Semiconductors," Thermodynamics of Alloy Formation, ed. Y. A. Chang (TMS, Warrendale, PA, 1997), 187.

  111. J. M. DeLucca and S. E. Mohney, "Approach to High Temperature Contacts to Silicon Carbide," III-N Nitride, SiC and Diamond Materials for Electronic Devices, ed. D. K. Gaskill, C. Brandt, and R. J. Nemanich (Materials Research Society Symposium Proceedings 423, 1996), 137.

  112. S. E. Mohney and X. Lin, "Estimated Phase Equilibria in the Transition Metal-Ga-N Systems: Consequences for Electrical Contacts to GaN," Journal of Electronic Materials 25, 811 (1996).

  113. S. E. Mohney, "Investigation of the Metal-Ga-N Phase Equilibria: Use of Nitrogen Stability Diagrams," III-V Nitride Materials and Processes, ed. T. D. Moustakas, J. P. Dismukes, and S. J. Pearton (The Electrochemical Society Proceedings 96-11, 1996), 129.

  114. S. E. Mohney, B. P. Luther, T. N. Jackson, and M. A. Khan, "Metallurgical Study of Contacts to Gallium Nitride," Gallium Nitride and Related Materials, ed. R. D. Dupuis, F. A. Ponce, S. Nakamura, and J. A. Edmond (Materials Research Society Symposium Proceedings 395, 1996), 843.

  115. S. E. Mohney and Y. A. Chang, "Phase Formation in Ni/InP Contacts," Journal of Applied Physics 78, 1342 (1995).

  116. S. E. Mohney and Y. A. Chang, "Interfacial Reactions and Phase Stability in Ni/InP Contacts," Advanced Metallization and Processing for Semiconductor Devices and Circuits: Science, Technology, and Manufacturability—III, ed. S. P. Murarka, K. N. Tu, A. Katz, K. Maex (Materials Research Society Symposium Proceedings 337, 1994), 393.

  117. Suzanne E. Mohney, "Metallurgical Studies of the Ni/InP, Pd/InP, and Pt/InP Systems and Their Application to the Design of Electrical Contacts to InP," Ph. D. Thesis, University of Wisconsin (1994).

  118. S. E. Mohney and Y. A. Chang, "Solid Phase Equilibria in the In-P-Pd System," Materials Science and Engineering B18, 94 (1993).

  119. S. E. Mohney, C. F. Lin, and Y. A. Chang, "Phase Formation and Stability in the Pd/GaP System," Applied Physics Letters 63, 1255 (1993).

  120. S. E. Mohney and Y. A. Chang, "Interfacial Reactions in Pt/InP Contacts," Journal of Applied Physics 74, 4403 (1993).

  121. C. F. Lin, S. E. Mohney, and Y. A. Chang, "Phase Equilibria in the Pt-In-P System," Journal of Applied Physics 74, 4398 (1993).

  122. S. E. Mohney and Y. A. Chang, "Phase Equilibria and Ternary Phase Formation in the In-Ni-P System," Journal of Materials Research 7, 955 (1992).

  123. S. E. Mohney and Y. A. Chang, "Phase Equilibria in the Metal-In-P Ternary Systems and Their Application to the Design of Metal Contacts to InP," Advanced Metallization and Processing for Semiconductor Device and Circuits—II, ed. A. Katz, Y. I. Nissim, S. P. Murarka, J. M. E. Harper (Materials Research Society Symposium Proceedings 260, 1992), 519.

  124. H. Guckel, J. J. Sniegowski, T. R. Christenson, S. E. Mohney, and T. F. Kelly, "Fabrication of Micromechanical Devices from Polysilicon Films with Smooth Surfaces," Sensors and Actuators 20, 117 (1989).

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