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 101 EES
Faculty Coordinator
Dr. Patrick Lenahan
Professor of Engineering Science and Mechanics

Mail to:
212 Earth-Engineering Sciences Bldg.
 University Park, PA 16802

Email:
 pmlesm@engr.psu.edu

Phone: (814)-863-4630
Fax: (814)-865-9974

Questions
 ESM Contacts
 

 

 

Publications (since 2000)

1.      J.P. Campbell, P.M. Lenahan, A.T. Krishnan, S. Krishnan, “Observations of NBTI-induced Atomic Scale Defects”, IEEE Trans. on Device and Materials Rel., June (2006)

2.      J.P. Campbell, P.M. Lenahan, A.T. Krishnan, and S. Krishnan, “NBTI: An Atomic-Scale Defect Perspective”, Proceedings of the International Reliability Physics Symposium, pp. 442-447 (2006) 

  1. J.P. Campbell, P.M. Lenahan, A.T. Krishnan, and S. Krishnan, “Observations of NBTI-induced Atomic Scale Defects”, International Integrated Reliability Workshop Final Report, pp. 1-4 (2005)

4.      Campbell JP, Lenahan PM, Krishnan AT, et al.
Direct observation of the structure of defect centers involved in the negative   temperature instability APPLIED PHYSICS LETTERS 87 (20): Art. No. 204106 NOV 14 2005 \ 

  1. J.T. Ryan, P.M. Lenahan, A.Y. Kang, J.F. Conley, Jr., G. Bersuker, and P. Lysaght, “Identification of the Atomic Scale Defects Involved in Radiation Damage in HfO2 Based MOS Devices”, IEEE Trans. Nucl. Sci. 52 (6), 2272-2275 (2005).
  2. Conley JF, Bersuker G, Lenahan PM
    Introduction to the special issue on high-k dielectric reliability 
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 5 (1): 3-4 MAR 2005
  3. Lenahan PM, Conley JF
    Magnetic resonance studies of trapping centers in high-k dielectric films on silicon 
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 5 (1): 90-102 MAR 2005
  4. Pribicko TG, Campbell JP, Lenahan PM, et al.
    Interface defects in Si/HfO2-based metal-oxide-semiconductor field-effect transistors 
    APPLIED PHYSICS LETTERS 86 (17): Art. No. 173511 APR 25 2005
  5. Meyer DJ, Dautrich MS, Lenahan PM, et al.
    Observation of deep level centers in 4H and 6H silicon carbide metal oxide semiconductor field effect transistors 
    MATERIALS SCIENCE FORUM 483: 593-596 2005
  6. Meyer DJ*, Lenahan PM, and Lelis AJ, Observation of trapping defects in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination, Applied Physics Letters, 86, 023503 (2005)
  7. Lenahan PM, Bond BN, Van Tol J, and Brunel LC, EPR:  Progress Towards Spin-Based Quantum Computing, Nanotechnology, E Bulletin, November (2004)
  8. Dautrich MS*, Lenahan PM, Kang AY*, et al., Non-Invasive nature of corona charging on thermal Si/SiO2, Applied Physics Letters, 85, 1844 (2004) 
  9. Meyer DJ*, Bohna NA*, Lenahan PM, et al., Spin dependent recombination at deep-level centers in 6H silicon carbide/silicon metal oxide semiconductor field effect transistors, Materials Science Forum, 457-460 & 477-480 (2004) 
  10. Meyer DJ*, Bohna NA*, Lenahan PM, et al., Structure of 6H silicon carbide/silicon dioxide interface trapping defects, Applied Physics Letters, 84, 3406 (2004) 
  11. Campbell JP*, Lenahan PM, Krishnan AT, and Krishnan S, Atomic scale defects involved in NBTI, IEEE International Integrated Reliability Workshop, 118-120 (2004)
  12. Lenahan PM, Practical Quantum Computing, Nano and Giga Challenges in Microelectronics, Edited by Greer J, Korkin A, and Labanowski J.  Elsevier, Amsterdam, 237-250 (2003) 
  13. Kang AY*, Lenahan PM, Conley JF, Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si, Applied Physics Letters, 83, 3407 (2003) 
  14. Dautrich MS*, Lenahan PM, Kang AY*, and Conley JF, Non-invasive nature of corona charging on thermal Si/SiO2 structures, IEEE International Integrated Reliability Workshop, 7-9 (2003) 
  15. Lenahan PM, Atomic Scale Defects Involved in MOS Reliability Problems, Microelectron. Eng., 69, 173 (2003) 
  16. Kang AY*, Lenahan PM, and Conley JF, Reliability Concerns for HfO2/Si Devices:  Interface and Dielectric Traps, IEEE International Integrated Reliability Workshop, 102-105 (2002) 
  17. Kang AY*, Lenahan PM, Conley JF, The radiation response of the high dielectric-constant hafnium oxide/silicon system, IEEE Transactions on Nuclear Science, 49, 2636 (2002) 
  18. Lenahan PM, Bohna NA*, Campbell JP*, Radiation-induced interface traps in MOS devices: Capture cross section and density of states of P-b1 silicon dangling bond centers, IEEE Transactions on Nuclear Science, 49, 2708 (2002) 
  19. Kang AY*, Lenahan PM, Conley JF, Jr., Solanki R, Electron Spin Resonance Study of Interface Defects in Atomic Layer Deposited Hafnium Oxide on Si, Applied Physics Letters, 81, 1128 (2002) 
  20. Campbell JP* and Lenahan PM, The Density of States of Pb1 Si/SiO2 Interface Trap Centers, Applied Physics Letters, 80, 1945 (2002) 
  21. Lenahan PM, Campbell JP*, Kang AY*, Liu ST, Weimer RA, Radiation Induced Leakage Currents: Atomic Scale Mechanisms, IEEE Transactions on Nuclear Science, 48, 2101 (2001) 
  22. Lenahan PM, Mishima TD***, Jumper J**, Fogarty TN, Wilkins R, Direct Experimental Evidence for Atomic Scale Structural Changes Involved in the Interface-Trap Transformation Process, IEEE Transactions on Nuclear Science, 48, 2131 (2001) 
  23. Lenahan PM, Mishima TD***, Fogarty TN, Wilkins R., Atomic-Scale Processes Involved in Long-Term Changes in the Density of States Distribution at the Si/SiO2 Interface, Applied Physics Letters, 79, pp 3266-3268 (2001)   
  24. Mishima TD***, Lenahan PM, Weber W., Response to "Comment on 'Do Pb1 Centers Have Levels in the Si Band Gap? Spin-Dependent Recombination Study of the Pb1 Hyperfine Spectrum" Applied Physics Letters, 78, pp 1453-1454 (2001)  
  25. Lenahan PM, Mele JJ**, Campbell JP*, Kang AY*, Lowry RK, Woodbury D, Liu ST, and Weimer R, Direct Experimental Evidence Linking Silicon Dangling Bond Defects to Oxide Leakage Currents, Proceedings of the 2001 IEEE International Reliability Physics Symposium, pp 150-155 (2001) 
  26. Lenahan PM, Kang AY*, and Campbell JP*, Atomic Scale Defects Involved in Stress Induced Leakage Currents in Very Thin Oxides on Silicon, Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices, V Kumar and PK Basu editors, Allied Publishers, New Delhi, pp 608-615 (2001) 
  27. Lenahan PM, The Connection Between Leakage Currents and Si/SiO2 Interface Trap Generation, Proceedings of the Sixth International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulation Films, KB Sundaram, WD Brown, MJ Deen D. Misra, D. Landheer, RE Sah, The Electrochemical Society Inc. Proceedings volume 2001-7, pp 74-79 (2001) 
  28. Mishima TD***, Lenahan PM,  A Spin-Dependent Recombination Study of Radiation-Induced Pb1 Centers at the (001) Si/SiO2 Interface, IEEE Transactions on Nuclear Science, 47, pp 2249-2255 (2000) 
  29. Lenahan PM, Mele JJ**, E ' Centers and Leakage Currents in the Gate Oxides of Metal Oxide Silicon Devices, Journal of Vacuum Science & Technology B, 18, pp 2169-2173 (2000)  
  30. Mishima TD***, Lenahan PM, Weber W, Do Pb1 Centers have Levels in the Si Band Gap? Spin-Dependent Recombination Study of the Pb1 "Hyperfine Spectrum", Applied Physics Letters, 76, pp 3771-3773 (2000)  
  31. Lenahan PM, Mele JJ**, Lowry RK, Woodbury D, Leakage Currents and Silicon Dangling Bonds in Amorphous Silicon Dioxide Thin Films, Journal of Non-Crystalline Solids, 266, pp 835-839 (2000)  
  32. Lenahan PM, Mele JJ**, Campbell JP*, Kang AY*, Lowry RK, Woodbury D, and Liu ST, Identification of Atomic Scale Defects Involved in Oxide Leakage Currents, 2000 IEEE International Integrated Reliability Workshop Final Report, pp 112-115 (2000) 
  33. (*) indicates graduate students supervised by Professor Lenahan
  34. (**) indicates undergraduate students supervised by Professor Lenahan
  35. (***) indicates post doctoral fellows supervised by Professor Lenahan

 

 

 

 

 

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