Photo of Samia Suliman

Samia Suliman

Associate Teaching Professor

Affiliation(s):

  • Engineering Science and Mechanics

407B Earth and Engineering Sciences Building

sas178@psu.edu

814-863-3574

Interest Areas:

Electrical characterization of microelectronic devices and materials.

 
 

 

Education

  • BS, Physics, Imperial College of Science and Technology, 1981
  • MS, Solid State Physics, Khartoum University, 1984
  • MS, Electrical Engineering, Southern Illinois University, 1995
  • Ph D, Engineering Science, The Pennsylvania State University, 2002

Publications

Book Reviews

  • Samia A Suliman, 2012, Silicon Photonics: for telecommunication and biomedicine

Journal Articles

  • Amartya K Ghosh, Jifa Hao, Michael Cook, Samia A Suliman, Xinyu Wang and Osama Awadelkarim, 2022, "Threshold-voltyage bias-instability in SiC MOSFETs:Effect of stress temperature and level on ovide charge buildup and recovery", Semiconductor Science and Technology, 37, (075015)
  • Amartya Ghosh, 2022, "Threshold-voltage bias-instability in SiC MOSFETs; effect of stress temperature and level on oxide charge and recovery’", Semiconductor Science and Technology, 37 (7), (07501510)
  • J. Hao, M Rioux, Samia A Suliman and Osama O Awadelkarim, 2014, "High Temperature Bias-Stress Induced Instability in Power Trench-Gated MOSFET Transistor", Microelectronics Reliability, 54, (2), pp. 374-380
  • K. Sarpatwar, L. J. Passmore, Samia A Suliman and O. O. Awadelkarim, 2007, "The analysis of current-voltage-temperature characterization in SiC Schottky diodes using threshold-accepting simulated-annealing technique", Solid State Electronics, 51, (5), pp. 644-649
  • Karthik Sarpatwar, Lucas Passmore, Samia A Suliman and Osama Awadelkarim, 2007, "Analysis of current-voltage-temperature characteristics in SiC Schottky diodes using threshold-accepting simulated-annealing techniques", Solid-State Electronics, 51, (5), pp. 644-649
  • Lucas Passmore, Karthik Sarpatwar, Samia A Suliman and Osama Awadelakrim, 2005, "Modified three terminal charge pumping technique applied to vertical transistor structures"
  • Samia A Suliman, Osama O Awadelkarim, R Ridley and G Donley, 2004, "Gate-oxide grown on the sidewalls and base of U-shaped Si trench: Effects of the oxide and oxide /Si interface condition on the properties of vertical MOS devices", 72, (1-4), pp. 247-252
  • Samia A Suliman, Osama Awadelakarim, Stephen Fonash, B. Venkataraman, Chuntao Wu, R. S. Ridley, G. M. Dolny, Osama O Awadelkarim and Jerzy Ruzyllo, 2003, "Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition", Solid-State Electronics, 47, (5), pp. 899-905
  • Samia A Suliman, Osama Awadelkarim, Stephen Fonash, R. S. Ridley, G. M. Dolny, J. Hao and C. M. Knoedler, 2002, "Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench", Solid-State Electronics, 46, (6), pp. 837-845
  • Samia A Suliman, N Gollagunta, L Trabz, J Hao, R S Ridley, C M Knoedler, G M Dolny, Osama O Awadelkarim and Stephen J Fonash, 2001, "The dependence of UMOSFETs characteristics and reliability on geometry and processing", 16, (6), pp. 447-454
  • Samia A Suliman, Osama O Awadelkarim, Stephen J Fonash, G. M. Dolny, J. Hao, R. S. Ridley and C. M. Knoedler, 2001, "The effects of channel boron-doping on the performance and hot electron reliability of N-channel trench UMOSFETs", Solid-State Electronics, 45, (5), pp. 655-661
  • Samia A Suliman, 2001, "The effects of channel boron-doping on the performance and reliability of N-channel trench UMOSFETs"
  • Osama O Awadelkarim, Samia A Suliman and Bo Monemar, 1990, "Defect states in carbon and oxygen implanted p-type silicon", JOURNAL OF APPLIED PHYSICS, 67, (1), pp. 270-275
  • Osama Awadelkarim, Samia A Suliman and Bo Monemar, 1989, "On the 0.34 eV hole trap in irradiated boron-doped silicon", RADIATION EFFECTS AND DEFECTS IN SOLIDS, 112, (1-2), pp. 273-280

Conference Proceedings

  • Samia A Suliman and Amar Amartya Ghoush, 2022, "Comparison of AC and DC BTI in SiC MOSFETs", 2022 IEEE IRPS ( International Relibility Physics Symposium)
  • Samia A Suliman and Amar Amartya Ghoush, 2020, "Studies of Bias Temperature Instabilities in 4H-SiC DMOSFETs", 2020 IEEE IRPS (International Relibility Physics Symposium)
  • Samia A Suliman, Osama O Awadelkarim, J Hao and M Rioux, 2014, "High-Temperature Reverse- Bias stressing of thin Oxide in Power Transistors", Conference: 12th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics held during the 226th Meeting of The Electrochemical-Society Location: Cancun, MEXICO Date: OCT 05-10, 2014
  • Clifford Lissenden, Christine Masters and Samia A Suliman, 2011, "Supplemental learning tools for Statics and Strength of Materials"
  • Osama O Awadelkarim, J. Jiang, Samia A Suliman, K. Sarpatwari, Lucas Passmore, David Lee, P. Roman and Jerzy Ruzyllo, 2007, "Electrical studies on metal / SrTa2O6 or TiO2/Si substrate stack system", 9, (1), pp. 353-362
  • Samia A Suliman, 2006, "The properties of Si/SiO2 interfaces in Vertical trench UMOSFETS; Silicon-Based Novel Structures and Devices", Shanghai-China
  • Lucas Passmore, K. Sarpatwari, Samia A Suliman, Osama O Awadelkarim, R. Ridley, G. Dolny, J. Michalowicz, Chuntao Wu, Karthik Sarpatwar, Samia A Suliman and Osama Awadelakrim, 2006, "Fowler-Nordheim and hot carrier reliabilities of U-shaped trench-gated transistors studied by three terminal charge pumping", 504, (1-2), pp. 302-306
  • Samia A Suliman, 2006, "Properties of Si/SiO2Interfaces in Vertical Trench MOSFETs", IEEE, International Workshop on Junction Technology, 2006, IWJT '06, pp. 225-228
  • K Sarpatwari, L J Passmore, Samia A Suliman and Osama O Awadelkarim, 2006, "Current- voltage characteristics and charge-carrier traps in n-type 4H-SiC Schottky structures", The 6th International Workshop on Junction Technology, Shanghai-China Session: Heterojunction Device and Contact, Shanghai, China
  • O O Awadelkarim and Samia A Suliman, 2005, "On the Reliability of U-Shaped Trench-Gated Metal- Oxide Silicon Field-Effect Transistors", V. Kumar, S. K. Agrawal, and S. N. Singh, Allied Publishers Pvt. Ltd, New Delhi, India, pp. 796-803
  • Lucas Passmore, K. Sarpatwari, Samia A Suliman, Osama O Awadelkarim, R. Ridley, G. Dolny, J. Michalowicz and Chuntao Wu, 2005, "Modified three terminal charge pumping technique applied to vertical transistor structures", 23, (5), pp. 2189-2193
  • Samia A Suliman, Stephen Fonash, Osama Awadelkarim, N. Gallogunta, L. Trabzon, J. Hao, G. Dolny, R. Ridley, T. Grebs, J. Benjamin, C. Kocon, J. Zeng, C. M. Knoedler, Osama O Awadelkarim, Stephen J Fonash and Jerzy Ruzyllo, 2002, "The impact of trench geometry and processing on performance and reliability of low voltage power UMOSFETs", Published in: 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167), 2001-January, pp. 308-314
  • C Wu, Samia A Suliman, Osama Awadelakrim and Jerzy Ryzyllo, 2002, "Growth and reliability of thick gate oxide in U-trench for power MOSFET's", Proceedings of the 14TH International Symposium on Power Semiconductor Devices & ICS, pp. 149-152
  • Gary Dolny, Samia A Suliman, N. Gollagunta, L. Trabzon, Mark W Horn, Osama O Awadelkarim, Stephen J Fonash, C. M. Knoedler, J. Hao, R. Ridley, C. Kocon, T. Grebs and J. Zeng, 2001, "Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETS using the charge-pumping technique", pp. 431-434

Research Projects

Honors and Awards

Service

Service to Penn State:

  • Participation in Governance Bodies and Related Activities, Member, Engineering Faculty Council, July 2023 - June 2024
  • Participation in Governance Bodies and Related Activities, Member, University Faculty Senate, Global Engagement Standing Committee, July 2023 - June 2024
  • Committee Work, Member, Engineering Faculty Council, July 2023 - June 2024
  • Academic Leadership and Support Work, Committee Member, University Facukty Senate Council, July 2023 - June 2024
  • Participation in Governance Bodies and Related Activities, Committee Member, Faculty Senate, CC&R Standing Committee, July 2022 - June 2023
  • Committee Work, Member, materials Qualifying Oral Exam, PSU, 2010
  • Assistance to Student Organizations, Evaluator, CoE-CERS- program /Paper-Poster-Oral presentation Judge, 2015
  • Contributions to Programs to Enhance Diversity, Equity, Inclusion, and Belonging, Panelist, College of Engineering Diversity Committee: International Panel, February 2016

Service to External Organizations:

  • Service to Governmental Agencies, Panelist, NSF-GRFP 2023-2024., Computer and Electrical Engineering, December 2023 - January 2024
  • Participation in or Service to Professional and Learned Societies, Other, Chairperson of Reliability-Testing track committee, International Reliability Physics Symposium-Reliability Test Track, IEEE, August 2022 - April 2023
  • Participation in or Service to Professional and Learned Societies, Other, Vice Chair of Reliability Testing track, International Reliability Physics Symposium-Reliability Test Track, IEEE, August 2021 - April 2022
  • Participation in or Service to Professional and Learned Societies, Member, International Reliability Physics Symposium-Reliability Test Track, IEEE, August 2020 - April 2021
  • Participation in or Service to Professional and Learned Societies, Member, International Reliability Physics Symposium-Reliability Test Track, IEEE, 2019 - 2020
  • Service to Governmental Agencies, Participant, NSF-ATE Advanced Technology Education, October 2014 - October 2014
  • Service to Governmental Agencies, Participant, NSF-ATE Advanced Technology Education, October 2013 - October 2013
  • Service to Governmental Agencies, Reviewer, NSF-SBIR-STTR Nanotechnology, August 2006
  • Service to Governmental Agencies, Participant, NSF- Additive Manufacturing Workshop, March 2014
  • Service to Governmental Agencies, Panelist, NSF-GRFP, 2006
 


 

About

The Penn State Department of Engineering Science and Mechanics (ESM) is an internationally distinguished department that is recognized for its globally competitive excellence in engineering and scientific accomplishments, research, and educational leadership.

Our Engineering Science program is the official undergraduate honors program of the College of Engineering, attracting the University’s brightest engineering students. We also offer graduate degrees in ESM, engineering mechanics, engineering at the nano-scale, and an integrated undergraduate/graduate program.

Department of Engineering Science and Mechanics

212 Earth and Engineering Sciences Building

The Pennsylvania State University

University Park, PA 16802

Phone: 814-865-4523